On the formation of the crystalline phases and nanostructure of silicon carbonitride layers grown on gallium arsenide substrates

The crystallization of thin silicon carbonitride layers obtained by chemical vapor deposition from silicon organic precursors on gallium arsenide substrates at 973 K in the presence of liquid gallium drops is studied. The layers grown by the vapor-liquid-solid method are studied by IR, Raman, and en...

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Veröffentlicht in:	Journal of structural chemistry 2012-07, Vol.53 (4), p.805-811
Hauptverfasser:	Fainer, N. I., Kosyakov, V. I., Rumyantsev, Yu. M., Maximovskii, E. A.
Format:	Artikel
Sprache:	eng
Schlagworte:	Atomic Atomic/Molecular Structure and Spectra Chemistry Chemistry and Materials Science Inorganic Chemistry Molecular Optical and Plasma Physics Physical Chemistry Solid State Physics
Online-Zugang:	Volltext
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