Ferromagnetic effect of a Mn delta layer in the GaAs barrier on the spin polarization of carriers in an InGaAs/GaAs quantum well
The polarization properties of the luminescence of an undoped InGaAs quantum well in InGaAs/GaAs het-erojunctions with a Mn delta layer in the GaAs barrier have been studied in a wide range of temperatures and magnetic fields. It has been found that the s , p - d exchange interaction of carriers in...
Gespeichert in:
| Veröffentlicht in: | JETP letters 2010-01, Vol.90 (10), p.658-662 |
|---|---|
| Hauptverfasser: | , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 662 |
|---|---|
| container_issue | 10 |
| container_start_page | 658 |
| container_title | JETP letters |
| container_volume | 90 |
| creator | Zaitsev, S. V. Dorokhin, M. V. Brichkin, A. S. Vikhrova, O. V. Danilov, Yu. A. Zvonkov, B. N. Kulakovskii, V. D. |
| description | The polarization properties of the luminescence of an undoped InGaAs quantum well in InGaAs/GaAs het-erojunctions with a Mn delta layer in the GaAs barrier have been studied in a wide range of temperatures and magnetic fields. It has been found that the
s
,
p
-
d
exchange interaction of carriers in the quantum well with Mn ions in the δ layer leads to the ferromagnetic behavior of both the Zeeman splitting and spin polarization of the carriers with a Curie temperature typical of the Mn delta layer in the GaAs barrier. The saturation of the spin polarization of holes associated with their Fermi degeneracy has been observed at low temperatures (
T
< 20 K). |
| doi_str_mv | 10.1134/S0021364009220056 |
| format | Article |
| fullrecord | <record><control><sourceid>crossref_sprin</sourceid><recordid>TN_cdi_crossref_primary_10_1134_S0021364009220056</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1134_S0021364009220056</sourcerecordid><originalsourceid>FETCH-LOGICAL-c288t-50f979a51c3fdba60ac2cbd5c4db19589ab2269288bad382c968bd2b80d6c4333</originalsourceid><addsrcrecordid>eNp9kM1OwzAQhC0EEqXwANz8AqFrOz_2sapoqVTEAThHa8cpqVKn2KlQOfHoOIQbEqeVZuYbrYaQWwZ3jIl09gzAmchTAMU5QJafkQkDBUmeyuKcTAY7GfxLchXCDoAxKYoJ-Vpa77s9bp3tG0NtXVvT066mSB8drWzbI23xZD1tHO3fLF3hPFCN3jdR60YtHKJ56Fr0zSf2TVRjgRkzYQDR0bUbyNkP_n5E1x_39MO27TW5qLEN9ub3Tsnr8v5l8ZBsnlbrxXyTGC5ln2RQq0JhxoyoK405oOFGV5lJK81UJhVqznMVsxorIblRudQV1xKq3KRCiClhY6_xXQje1uXBN3v0p5JBOUxY_pkwMnxkQsy6rfXlrjt6F9_8B_oGC4JzpA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Ferromagnetic effect of a Mn delta layer in the GaAs barrier on the spin polarization of carriers in an InGaAs/GaAs quantum well</title><source>SpringerLink Journals - AutoHoldings</source><creator>Zaitsev, S. V. ; Dorokhin, M. V. ; Brichkin, A. S. ; Vikhrova, O. V. ; Danilov, Yu. A. ; Zvonkov, B. N. ; Kulakovskii, V. D.</creator><creatorcontrib>Zaitsev, S. V. ; Dorokhin, M. V. ; Brichkin, A. S. ; Vikhrova, O. V. ; Danilov, Yu. A. ; Zvonkov, B. N. ; Kulakovskii, V. D.</creatorcontrib><description>The polarization properties of the luminescence of an undoped InGaAs quantum well in InGaAs/GaAs het-erojunctions with a Mn delta layer in the GaAs barrier have been studied in a wide range of temperatures and magnetic fields. It has been found that the
s
,
p
-
d
exchange interaction of carriers in the quantum well with Mn ions in the δ layer leads to the ferromagnetic behavior of both the Zeeman splitting and spin polarization of the carriers with a Curie temperature typical of the Mn delta layer in the GaAs barrier. The saturation of the spin polarization of holes associated with their Fermi degeneracy has been observed at low temperatures (
T
< 20 K).</description><identifier>ISSN: 0021-3640</identifier><identifier>EISSN: 1090-6487</identifier><identifier>DOI: 10.1134/S0021364009220056</identifier><language>eng</language><publisher>Dordrecht: SP MAIK Nauka/Interperiodica</publisher><subject>Atomic ; Biological and Medical Physics ; Biophysics ; Molecular ; Optical and Plasma Physics ; Particle and Nuclear Physics ; Physics ; Physics and Astronomy ; Quantum Information Technology ; Solid State Physics ; Spintronics</subject><ispartof>JETP letters, 2010-01, Vol.90 (10), p.658-662</ispartof><rights>Pleiades Publishing, Ltd. 2010</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c288t-50f979a51c3fdba60ac2cbd5c4db19589ab2269288bad382c968bd2b80d6c4333</citedby><cites>FETCH-LOGICAL-c288t-50f979a51c3fdba60ac2cbd5c4db19589ab2269288bad382c968bd2b80d6c4333</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1134/S0021364009220056$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1134/S0021364009220056$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,41488,42557,51319</link.rule.ids></links><search><creatorcontrib>Zaitsev, S. V.</creatorcontrib><creatorcontrib>Dorokhin, M. V.</creatorcontrib><creatorcontrib>Brichkin, A. S.</creatorcontrib><creatorcontrib>Vikhrova, O. V.</creatorcontrib><creatorcontrib>Danilov, Yu. A.</creatorcontrib><creatorcontrib>Zvonkov, B. N.</creatorcontrib><creatorcontrib>Kulakovskii, V. D.</creatorcontrib><title>Ferromagnetic effect of a Mn delta layer in the GaAs barrier on the spin polarization of carriers in an InGaAs/GaAs quantum well</title><title>JETP letters</title><addtitle>Jetp Lett</addtitle><description>The polarization properties of the luminescence of an undoped InGaAs quantum well in InGaAs/GaAs het-erojunctions with a Mn delta layer in the GaAs barrier have been studied in a wide range of temperatures and magnetic fields. It has been found that the
s
,
p
-
d
exchange interaction of carriers in the quantum well with Mn ions in the δ layer leads to the ferromagnetic behavior of both the Zeeman splitting and spin polarization of the carriers with a Curie temperature typical of the Mn delta layer in the GaAs barrier. The saturation of the spin polarization of holes associated with their Fermi degeneracy has been observed at low temperatures (
T
< 20 K).</description><subject>Atomic</subject><subject>Biological and Medical Physics</subject><subject>Biophysics</subject><subject>Molecular</subject><subject>Optical and Plasma Physics</subject><subject>Particle and Nuclear Physics</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Quantum Information Technology</subject><subject>Solid State Physics</subject><subject>Spintronics</subject><issn>0021-3640</issn><issn>1090-6487</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNp9kM1OwzAQhC0EEqXwANz8AqFrOz_2sapoqVTEAThHa8cpqVKn2KlQOfHoOIQbEqeVZuYbrYaQWwZ3jIl09gzAmchTAMU5QJafkQkDBUmeyuKcTAY7GfxLchXCDoAxKYoJ-Vpa77s9bp3tG0NtXVvT066mSB8drWzbI23xZD1tHO3fLF3hPFCN3jdR60YtHKJ56Fr0zSf2TVRjgRkzYQDR0bUbyNkP_n5E1x_39MO27TW5qLEN9ub3Tsnr8v5l8ZBsnlbrxXyTGC5ln2RQq0JhxoyoK405oOFGV5lJK81UJhVqznMVsxorIblRudQV1xKq3KRCiClhY6_xXQje1uXBN3v0p5JBOUxY_pkwMnxkQsy6rfXlrjt6F9_8B_oGC4JzpA</recordid><startdate>20100101</startdate><enddate>20100101</enddate><creator>Zaitsev, S. V.</creator><creator>Dorokhin, M. V.</creator><creator>Brichkin, A. S.</creator><creator>Vikhrova, O. V.</creator><creator>Danilov, Yu. A.</creator><creator>Zvonkov, B. N.</creator><creator>Kulakovskii, V. D.</creator><general>SP MAIK Nauka/Interperiodica</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20100101</creationdate><title>Ferromagnetic effect of a Mn delta layer in the GaAs barrier on the spin polarization of carriers in an InGaAs/GaAs quantum well</title><author>Zaitsev, S. V. ; Dorokhin, M. V. ; Brichkin, A. S. ; Vikhrova, O. V. ; Danilov, Yu. A. ; Zvonkov, B. N. ; Kulakovskii, V. D.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c288t-50f979a51c3fdba60ac2cbd5c4db19589ab2269288bad382c968bd2b80d6c4333</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>Atomic</topic><topic>Biological and Medical Physics</topic><topic>Biophysics</topic><topic>Molecular</topic><topic>Optical and Plasma Physics</topic><topic>Particle and Nuclear Physics</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Quantum Information Technology</topic><topic>Solid State Physics</topic><topic>Spintronics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zaitsev, S. V.</creatorcontrib><creatorcontrib>Dorokhin, M. V.</creatorcontrib><creatorcontrib>Brichkin, A. S.</creatorcontrib><creatorcontrib>Vikhrova, O. V.</creatorcontrib><creatorcontrib>Danilov, Yu. A.</creatorcontrib><creatorcontrib>Zvonkov, B. N.</creatorcontrib><creatorcontrib>Kulakovskii, V. D.</creatorcontrib><collection>CrossRef</collection><jtitle>JETP letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zaitsev, S. V.</au><au>Dorokhin, M. V.</au><au>Brichkin, A. S.</au><au>Vikhrova, O. V.</au><au>Danilov, Yu. A.</au><au>Zvonkov, B. N.</au><au>Kulakovskii, V. D.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Ferromagnetic effect of a Mn delta layer in the GaAs barrier on the spin polarization of carriers in an InGaAs/GaAs quantum well</atitle><jtitle>JETP letters</jtitle><stitle>Jetp Lett</stitle><date>2010-01-01</date><risdate>2010</risdate><volume>90</volume><issue>10</issue><spage>658</spage><epage>662</epage><pages>658-662</pages><issn>0021-3640</issn><eissn>1090-6487</eissn><abstract>The polarization properties of the luminescence of an undoped InGaAs quantum well in InGaAs/GaAs het-erojunctions with a Mn delta layer in the GaAs barrier have been studied in a wide range of temperatures and magnetic fields. It has been found that the
s
,
p
-
d
exchange interaction of carriers in the quantum well with Mn ions in the δ layer leads to the ferromagnetic behavior of both the Zeeman splitting and spin polarization of the carriers with a Curie temperature typical of the Mn delta layer in the GaAs barrier. The saturation of the spin polarization of holes associated with their Fermi degeneracy has been observed at low temperatures (
T
< 20 K).</abstract><cop>Dordrecht</cop><pub>SP MAIK Nauka/Interperiodica</pub><doi>10.1134/S0021364009220056</doi><tpages>5</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0021-3640 |
| ispartof | JETP letters, 2010-01, Vol.90 (10), p.658-662 |
| issn | 0021-3640 1090-6487 |
| language | eng |
| recordid | cdi_crossref_primary_10_1134_S0021364009220056 |
| source | SpringerLink Journals - AutoHoldings |
| subjects | Atomic Biological and Medical Physics Biophysics Molecular Optical and Plasma Physics Particle and Nuclear Physics Physics Physics and Astronomy Quantum Information Technology Solid State Physics Spintronics |
| title | Ferromagnetic effect of a Mn delta layer in the GaAs barrier on the spin polarization of carriers in an InGaAs/GaAs quantum well |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-05T20%3A10%3A37IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref_sprin&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Ferromagnetic%20effect%20of%20a%20Mn%20delta%20layer%20in%20the%20GaAs%20barrier%20on%20the%20spin%20polarization%20of%20carriers%20in%20an%20InGaAs/GaAs%20quantum%20well&rft.jtitle=JETP%20letters&rft.au=Zaitsev,%20S.%20V.&rft.date=2010-01-01&rft.volume=90&rft.issue=10&rft.spage=658&rft.epage=662&rft.pages=658-662&rft.issn=0021-3640&rft.eissn=1090-6487&rft_id=info:doi/10.1134/S0021364009220056&rft_dat=%3Ccrossref_sprin%3E10_1134_S0021364009220056%3C/crossref_sprin%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |