Investigation of the spatial distribution of silicon donor pairs in a GaAs quantum well
Tunneling through the localized electronic states, which lie below the levels of isolated shallow donors in a weakly silicon-doped GaAs quantum well of a resonance tunneling diode, has been studied. The contour maps of the spatial distribution of the electron probability density of these states have...
Gespeichert in:
| Veröffentlicht in: | JETP letters 2009-11, Vol.90 (6), p.449-454 |
|---|---|
| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 454 |
|---|---|
| container_issue | 6 |
| container_start_page | 449 |
| container_title | JETP letters |
| container_volume | 90 |
| creator | Vdovin, E. E. Khanin, Yu. N. |
| description | Tunneling through the localized electronic states, which lie below the levels of isolated shallow donors in a weakly silicon-doped GaAs quantum well of a resonance tunneling diode, has been studied. The contour maps of the spatial distribution of the electron probability density of these states have been obtained by means of wavefunction imaging. It has been found that the wavefunctions have axial symmetry and a shape similar to the ground state of a hydrogen molecule, whereas the characteristic sizes of the wavefunctions coincide with the theoretical predictions for the H
2
-like states of the donor silicon pairs in the GaAs quantum well with the appropriate binding energies. |
| doi_str_mv | 10.1134/S0021364009180106 |
| format | Article |
| fullrecord | <record><control><sourceid>crossref_sprin</sourceid><recordid>TN_cdi_crossref_primary_10_1134_S0021364009180106</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1134_S0021364009180106</sourcerecordid><originalsourceid>FETCH-LOGICAL-c288t-c7a6a6e969715133c09362f2e1e8f770fcde1ecf2ef918290eb1f168e8b076d3</originalsourceid><addsrcrecordid>eNp9UEFOwzAQtBBIhMIDuPkDgd042M6xqqBUqsSBShwjx7GLq9QpdgLi9zhqOSFx2tmdndHuEHKLcIfIyvtXgAIZLwEqlIDAz0iGUEHOSynOSTbR-cRfkqsYdwCIkomMvK38p4mD26rB9Z72lg7vhsZDalVHWxeH4Jrxl4uuczrBtvd9oAflQqTOU0WXah7px6j8MO7pl-m6a3JhVRfNzanOyObpcbN4ztcvy9Vivs51IeWQa6G44qbilcAHZExDxXhhC4NGWiHA6jZBnQY2_VVUYBq0yKWRDQjeshnBo60OfYzB2PoQ3F6F7xqhnoKp_wSTNMVRE9Ou35pQ7_ox-HTlP6Iff0hllQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Investigation of the spatial distribution of silicon donor pairs in a GaAs quantum well</title><source>SpringerLink Journals - AutoHoldings</source><creator>Vdovin, E. E. ; Khanin, Yu. N.</creator><creatorcontrib>Vdovin, E. E. ; Khanin, Yu. N.</creatorcontrib><description>Tunneling through the localized electronic states, which lie below the levels of isolated shallow donors in a weakly silicon-doped GaAs quantum well of a resonance tunneling diode, has been studied. The contour maps of the spatial distribution of the electron probability density of these states have been obtained by means of wavefunction imaging. It has been found that the wavefunctions have axial symmetry and a shape similar to the ground state of a hydrogen molecule, whereas the characteristic sizes of the wavefunctions coincide with the theoretical predictions for the H
2
-like states of the donor silicon pairs in the GaAs quantum well with the appropriate binding energies.</description><identifier>ISSN: 0021-3640</identifier><identifier>EISSN: 1090-6487</identifier><identifier>DOI: 10.1134/S0021364009180106</identifier><language>eng</language><publisher>Dordrecht: SP MAIK Nauka/Interperiodica</publisher><subject>Atomic ; Biological and Medical Physics ; Biophysics ; Molecular ; Optical and Plasma Physics ; Particle and Nuclear Physics ; Physics ; Physics and Astronomy ; Quantum Information Technology ; Solid State Physics ; Spintronics</subject><ispartof>JETP letters, 2009-11, Vol.90 (6), p.449-454</ispartof><rights>Pleiades Publishing, Ltd. 2009</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c288t-c7a6a6e969715133c09362f2e1e8f770fcde1ecf2ef918290eb1f168e8b076d3</citedby><cites>FETCH-LOGICAL-c288t-c7a6a6e969715133c09362f2e1e8f770fcde1ecf2ef918290eb1f168e8b076d3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1134/S0021364009180106$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1134/S0021364009180106$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,780,784,27922,27923,41486,42555,51317</link.rule.ids></links><search><creatorcontrib>Vdovin, E. E.</creatorcontrib><creatorcontrib>Khanin, Yu. N.</creatorcontrib><title>Investigation of the spatial distribution of silicon donor pairs in a GaAs quantum well</title><title>JETP letters</title><addtitle>Jetp Lett</addtitle><description>Tunneling through the localized electronic states, which lie below the levels of isolated shallow donors in a weakly silicon-doped GaAs quantum well of a resonance tunneling diode, has been studied. The contour maps of the spatial distribution of the electron probability density of these states have been obtained by means of wavefunction imaging. It has been found that the wavefunctions have axial symmetry and a shape similar to the ground state of a hydrogen molecule, whereas the characteristic sizes of the wavefunctions coincide with the theoretical predictions for the H
2
-like states of the donor silicon pairs in the GaAs quantum well with the appropriate binding energies.</description><subject>Atomic</subject><subject>Biological and Medical Physics</subject><subject>Biophysics</subject><subject>Molecular</subject><subject>Optical and Plasma Physics</subject><subject>Particle and Nuclear Physics</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Quantum Information Technology</subject><subject>Solid State Physics</subject><subject>Spintronics</subject><issn>0021-3640</issn><issn>1090-6487</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><recordid>eNp9UEFOwzAQtBBIhMIDuPkDgd042M6xqqBUqsSBShwjx7GLq9QpdgLi9zhqOSFx2tmdndHuEHKLcIfIyvtXgAIZLwEqlIDAz0iGUEHOSynOSTbR-cRfkqsYdwCIkomMvK38p4mD26rB9Z72lg7vhsZDalVHWxeH4Jrxl4uuczrBtvd9oAflQqTOU0WXah7px6j8MO7pl-m6a3JhVRfNzanOyObpcbN4ztcvy9Vivs51IeWQa6G44qbilcAHZExDxXhhC4NGWiHA6jZBnQY2_VVUYBq0yKWRDQjeshnBo60OfYzB2PoQ3F6F7xqhnoKp_wSTNMVRE9Ou35pQ7_ox-HTlP6Iff0hllQ</recordid><startdate>20091101</startdate><enddate>20091101</enddate><creator>Vdovin, E. E.</creator><creator>Khanin, Yu. N.</creator><general>SP MAIK Nauka/Interperiodica</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20091101</creationdate><title>Investigation of the spatial distribution of silicon donor pairs in a GaAs quantum well</title><author>Vdovin, E. E. ; Khanin, Yu. N.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c288t-c7a6a6e969715133c09362f2e1e8f770fcde1ecf2ef918290eb1f168e8b076d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><topic>Atomic</topic><topic>Biological and Medical Physics</topic><topic>Biophysics</topic><topic>Molecular</topic><topic>Optical and Plasma Physics</topic><topic>Particle and Nuclear Physics</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Quantum Information Technology</topic><topic>Solid State Physics</topic><topic>Spintronics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Vdovin, E. E.</creatorcontrib><creatorcontrib>Khanin, Yu. N.</creatorcontrib><collection>CrossRef</collection><jtitle>JETP letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Vdovin, E. E.</au><au>Khanin, Yu. N.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Investigation of the spatial distribution of silicon donor pairs in a GaAs quantum well</atitle><jtitle>JETP letters</jtitle><stitle>Jetp Lett</stitle><date>2009-11-01</date><risdate>2009</risdate><volume>90</volume><issue>6</issue><spage>449</spage><epage>454</epage><pages>449-454</pages><issn>0021-3640</issn><eissn>1090-6487</eissn><abstract>Tunneling through the localized electronic states, which lie below the levels of isolated shallow donors in a weakly silicon-doped GaAs quantum well of a resonance tunneling diode, has been studied. The contour maps of the spatial distribution of the electron probability density of these states have been obtained by means of wavefunction imaging. It has been found that the wavefunctions have axial symmetry and a shape similar to the ground state of a hydrogen molecule, whereas the characteristic sizes of the wavefunctions coincide with the theoretical predictions for the H
2
-like states of the donor silicon pairs in the GaAs quantum well with the appropriate binding energies.</abstract><cop>Dordrecht</cop><pub>SP MAIK Nauka/Interperiodica</pub><doi>10.1134/S0021364009180106</doi><tpages>6</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0021-3640 |
| ispartof | JETP letters, 2009-11, Vol.90 (6), p.449-454 |
| issn | 0021-3640 1090-6487 |
| language | eng |
| recordid | cdi_crossref_primary_10_1134_S0021364009180106 |
| source | SpringerLink Journals - AutoHoldings |
| subjects | Atomic Biological and Medical Physics Biophysics Molecular Optical and Plasma Physics Particle and Nuclear Physics Physics Physics and Astronomy Quantum Information Technology Solid State Physics Spintronics |
| title | Investigation of the spatial distribution of silicon donor pairs in a GaAs quantum well |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-09T23%3A13%3A55IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref_sprin&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Investigation%20of%20the%20spatial%20distribution%20of%20silicon%20donor%20pairs%20in%20a%20GaAs%20quantum%20well&rft.jtitle=JETP%20letters&rft.au=Vdovin,%20E.%20E.&rft.date=2009-11-01&rft.volume=90&rft.issue=6&rft.spage=449&rft.epage=454&rft.pages=449-454&rft.issn=0021-3640&rft.eissn=1090-6487&rft_id=info:doi/10.1134/S0021364009180106&rft_dat=%3Ccrossref_sprin%3E10_1134_S0021364009180106%3C/crossref_sprin%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |