Microwave field-effect transistors based on group-III nitrides
Gespeichert in:
| Veröffentlicht in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2004-10, Vol.38 (10), p.1235-1239 |
|---|---|
| Hauptverfasser: | , , , , , , , , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 1239 |
|---|---|
| container_issue | 10 |
| container_start_page | 1235 |
| container_title | Semiconductors (Woodbury, N.Y.) |
| container_volume | 38 |
| creator | Aleksandrov, S. B. Baranov, D. A. Kaidash, A. P. Krasovitskii, D. M. Pavlenko, M. V. Petrov, S. I. Pogorel’skii, Yu. V. Sokolov, I. A. Stepanov, M. V. Chalyi, V. P. Gladysheva, N. B. Dorofeev, A. A. Matveev, Yu. A. Chernyavskii, A. A. |
| description | |
| doi_str_mv | 10.1134/1.1808836 |
| format | Article |
| fullrecord | <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1134_1_1808836</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1134_1_1808836</sourcerecordid><originalsourceid>FETCH-LOGICAL-c227t-bc442bd3d036581547f739b4bafe4502fd2f4d029457de32bfaa4f1277c995483</originalsourceid><addsrcrecordid>eNotj81OAyEURonRxFpd-AZsXVC5cBlgY2IafyapcaNrAgMYTJ1pYNT49trY1flWJ98h5BL4CkDiNazAcGNkd0QWwC1nHWp7vN-dZNqI7pSctfbOOYBRuCA3T2Wo07f_SjSXtI0s5ZyGmc7Vj620eaqNBt9SpNNI3-r0uWN939OxzLXE1M7JSfbbli4OXJLX-7uX9SPbPD_069sNG4TQMwsDoghRRi47ZUChzlragMHnhIqLHEXGyIVFpWOSImTvMYPQerBWoZFLcvXv_TvbWk3Z7Wr58PXHAXf7cAfuEC5_AVd_Sgs</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Microwave field-effect transistors based on group-III nitrides</title><source>SpringerNature Journals</source><creator>Aleksandrov, S. B. ; Baranov, D. A. ; Kaidash, A. P. ; Krasovitskii, D. M. ; Pavlenko, M. V. ; Petrov, S. I. ; Pogorel’skii, Yu. V. ; Sokolov, I. A. ; Stepanov, M. V. ; Chalyi, V. P. ; Gladysheva, N. B. ; Dorofeev, A. A. ; Matveev, Yu. A. ; Chernyavskii, A. A.</creator><creatorcontrib>Aleksandrov, S. B. ; Baranov, D. A. ; Kaidash, A. P. ; Krasovitskii, D. M. ; Pavlenko, M. V. ; Petrov, S. I. ; Pogorel’skii, Yu. V. ; Sokolov, I. A. ; Stepanov, M. V. ; Chalyi, V. P. ; Gladysheva, N. B. ; Dorofeev, A. A. ; Matveev, Yu. A. ; Chernyavskii, A. A.</creatorcontrib><identifier>ISSN: 1063-7826</identifier><identifier>EISSN: 1090-6479</identifier><identifier>DOI: 10.1134/1.1808836</identifier><language>eng</language><ispartof>Semiconductors (Woodbury, N.Y.), 2004-10, Vol.38 (10), p.1235-1239</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c227t-bc442bd3d036581547f739b4bafe4502fd2f4d029457de32bfaa4f1277c995483</citedby><cites>FETCH-LOGICAL-c227t-bc442bd3d036581547f739b4bafe4502fd2f4d029457de32bfaa4f1277c995483</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>315,781,785,27929,27930</link.rule.ids></links><search><creatorcontrib>Aleksandrov, S. B.</creatorcontrib><creatorcontrib>Baranov, D. A.</creatorcontrib><creatorcontrib>Kaidash, A. P.</creatorcontrib><creatorcontrib>Krasovitskii, D. M.</creatorcontrib><creatorcontrib>Pavlenko, M. V.</creatorcontrib><creatorcontrib>Petrov, S. I.</creatorcontrib><creatorcontrib>Pogorel’skii, Yu. V.</creatorcontrib><creatorcontrib>Sokolov, I. A.</creatorcontrib><creatorcontrib>Stepanov, M. V.</creatorcontrib><creatorcontrib>Chalyi, V. P.</creatorcontrib><creatorcontrib>Gladysheva, N. B.</creatorcontrib><creatorcontrib>Dorofeev, A. A.</creatorcontrib><creatorcontrib>Matveev, Yu. A.</creatorcontrib><creatorcontrib>Chernyavskii, A. A.</creatorcontrib><title>Microwave field-effect transistors based on group-III nitrides</title><title>Semiconductors (Woodbury, N.Y.)</title><issn>1063-7826</issn><issn>1090-6479</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2004</creationdate><recordtype>article</recordtype><recordid>eNotj81OAyEURonRxFpd-AZsXVC5cBlgY2IafyapcaNrAgMYTJ1pYNT49trY1flWJ98h5BL4CkDiNazAcGNkd0QWwC1nHWp7vN-dZNqI7pSctfbOOYBRuCA3T2Wo07f_SjSXtI0s5ZyGmc7Vj620eaqNBt9SpNNI3-r0uWN939OxzLXE1M7JSfbbli4OXJLX-7uX9SPbPD_069sNG4TQMwsDoghRRi47ZUChzlragMHnhIqLHEXGyIVFpWOSImTvMYPQerBWoZFLcvXv_TvbWk3Z7Wr58PXHAXf7cAfuEC5_AVd_Sgs</recordid><startdate>200410</startdate><enddate>200410</enddate><creator>Aleksandrov, S. B.</creator><creator>Baranov, D. A.</creator><creator>Kaidash, A. P.</creator><creator>Krasovitskii, D. M.</creator><creator>Pavlenko, M. V.</creator><creator>Petrov, S. I.</creator><creator>Pogorel’skii, Yu. V.</creator><creator>Sokolov, I. A.</creator><creator>Stepanov, M. V.</creator><creator>Chalyi, V. P.</creator><creator>Gladysheva, N. B.</creator><creator>Dorofeev, A. A.</creator><creator>Matveev, Yu. A.</creator><creator>Chernyavskii, A. A.</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>200410</creationdate><title>Microwave field-effect transistors based on group-III nitrides</title><author>Aleksandrov, S. B. ; Baranov, D. A. ; Kaidash, A. P. ; Krasovitskii, D. M. ; Pavlenko, M. V. ; Petrov, S. I. ; Pogorel’skii, Yu. V. ; Sokolov, I. A. ; Stepanov, M. V. ; Chalyi, V. P. ; Gladysheva, N. B. ; Dorofeev, A. A. ; Matveev, Yu. A. ; Chernyavskii, A. A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c227t-bc442bd3d036581547f739b4bafe4502fd2f4d029457de32bfaa4f1277c995483</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2004</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Aleksandrov, S. B.</creatorcontrib><creatorcontrib>Baranov, D. A.</creatorcontrib><creatorcontrib>Kaidash, A. P.</creatorcontrib><creatorcontrib>Krasovitskii, D. M.</creatorcontrib><creatorcontrib>Pavlenko, M. V.</creatorcontrib><creatorcontrib>Petrov, S. I.</creatorcontrib><creatorcontrib>Pogorel’skii, Yu. V.</creatorcontrib><creatorcontrib>Sokolov, I. A.</creatorcontrib><creatorcontrib>Stepanov, M. V.</creatorcontrib><creatorcontrib>Chalyi, V. P.</creatorcontrib><creatorcontrib>Gladysheva, N. B.</creatorcontrib><creatorcontrib>Dorofeev, A. A.</creatorcontrib><creatorcontrib>Matveev, Yu. A.</creatorcontrib><creatorcontrib>Chernyavskii, A. A.</creatorcontrib><collection>CrossRef</collection><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Aleksandrov, S. B.</au><au>Baranov, D. A.</au><au>Kaidash, A. P.</au><au>Krasovitskii, D. M.</au><au>Pavlenko, M. V.</au><au>Petrov, S. I.</au><au>Pogorel’skii, Yu. V.</au><au>Sokolov, I. A.</au><au>Stepanov, M. V.</au><au>Chalyi, V. P.</au><au>Gladysheva, N. B.</au><au>Dorofeev, A. A.</au><au>Matveev, Yu. A.</au><au>Chernyavskii, A. A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Microwave field-effect transistors based on group-III nitrides</atitle><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle><date>2004-10</date><risdate>2004</risdate><volume>38</volume><issue>10</issue><spage>1235</spage><epage>1239</epage><pages>1235-1239</pages><issn>1063-7826</issn><eissn>1090-6479</eissn><doi>10.1134/1.1808836</doi><tpages>5</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 1063-7826 |
| ispartof | Semiconductors (Woodbury, N.Y.), 2004-10, Vol.38 (10), p.1235-1239 |
| issn | 1063-7826 1090-6479 |
| language | eng |
| recordid | cdi_crossref_primary_10_1134_1_1808836 |
| source | SpringerNature Journals |
| title | Microwave field-effect transistors based on group-III nitrides |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-14T19%3A10%3A14IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Microwave%20field-effect%20transistors%20based%20on%20group-III%20nitrides&rft.jtitle=Semiconductors%20(Woodbury,%20N.Y.)&rft.au=Aleksandrov,%20S.%20B.&rft.date=2004-10&rft.volume=38&rft.issue=10&rft.spage=1235&rft.epage=1239&rft.pages=1235-1239&rft.issn=1063-7826&rft.eissn=1090-6479&rft_id=info:doi/10.1134/1.1808836&rft_dat=%3Ccrossref%3E10_1134_1_1808836%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |