Electrical properties of fine-grained polycrystalline CdTe
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| Veröffentlicht in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2004-04, Vol.38 (4), p.455-460 |
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| container_end_page | 460 |
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| container_issue | 4 |
| container_start_page | 455 |
| container_title | Semiconductors (Woodbury, N.Y.) |
| container_volume | 38 |
| creator | Kolosov, S. A. Klevkov, Yu. V. Plotnikov, A. F. |
| description | |
| doi_str_mv | 10.1134/1.1734674 |
| format | Article |
| fullrecord | <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1134_1_1734674</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1134_1_1734674</sourcerecordid><originalsourceid>FETCH-LOGICAL-c227t-7e9e3e0b93152c03afbb042d1d2a236610299bffdf5b3e937bf5b8e7f9834d233</originalsourceid><addsrcrecordid>eNotj0tLxDAURoMoOI4u_AfdusiYm5s2jTsp4wMG3IzrkseNVKItSTf993ZwVufwLT44jN2D2AGgeoQdaFSNVhdsA8II3ihtLk_eINetbK7ZTSnfQgC0tdqwp30iP-fB21RNeZwozwOVaoxVHH6Jf2W7IlTTmBaflzLblNah6sKRbtlVtKnQ3Zlb9vmyP3Zv_PDx-t49H7iXUs9ckyEk4QxCLb1AG50TSgYI0kpsGhDSGBdjiLVDMqjdKi3paFpUQSJu2cP_r89jKZliP-Xhx-alB9Gfonvoz9H4B0waSUY</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Electrical properties of fine-grained polycrystalline CdTe</title><source>SpringerNature Journals</source><creator>Kolosov, S. A. ; Klevkov, Yu. V. ; Plotnikov, A. F.</creator><creatorcontrib>Kolosov, S. A. ; Klevkov, Yu. V. ; Plotnikov, A. F.</creatorcontrib><identifier>ISSN: 1063-7826</identifier><identifier>EISSN: 1090-6479</identifier><identifier>DOI: 10.1134/1.1734674</identifier><language>eng</language><ispartof>Semiconductors (Woodbury, N.Y.), 2004-04, Vol.38 (4), p.455-460</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c227t-7e9e3e0b93152c03afbb042d1d2a236610299bffdf5b3e937bf5b8e7f9834d233</citedby><cites>FETCH-LOGICAL-c227t-7e9e3e0b93152c03afbb042d1d2a236610299bffdf5b3e937bf5b8e7f9834d233</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Kolosov, S. A.</creatorcontrib><creatorcontrib>Klevkov, Yu. V.</creatorcontrib><creatorcontrib>Plotnikov, A. F.</creatorcontrib><title>Electrical properties of fine-grained polycrystalline CdTe</title><title>Semiconductors (Woodbury, N.Y.)</title><issn>1063-7826</issn><issn>1090-6479</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2004</creationdate><recordtype>article</recordtype><recordid>eNotj0tLxDAURoMoOI4u_AfdusiYm5s2jTsp4wMG3IzrkseNVKItSTf993ZwVufwLT44jN2D2AGgeoQdaFSNVhdsA8II3ihtLk_eINetbK7ZTSnfQgC0tdqwp30iP-fB21RNeZwozwOVaoxVHH6Jf2W7IlTTmBaflzLblNah6sKRbtlVtKnQ3Zlb9vmyP3Zv_PDx-t49H7iXUs9ckyEk4QxCLb1AG50TSgYI0kpsGhDSGBdjiLVDMqjdKi3paFpUQSJu2cP_r89jKZliP-Xhx-alB9Gfonvoz9H4B0waSUY</recordid><startdate>200404</startdate><enddate>200404</enddate><creator>Kolosov, S. A.</creator><creator>Klevkov, Yu. V.</creator><creator>Plotnikov, A. F.</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>200404</creationdate><title>Electrical properties of fine-grained polycrystalline CdTe</title><author>Kolosov, S. A. ; Klevkov, Yu. V. ; Plotnikov, A. F.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c227t-7e9e3e0b93152c03afbb042d1d2a236610299bffdf5b3e937bf5b8e7f9834d233</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2004</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kolosov, S. A.</creatorcontrib><creatorcontrib>Klevkov, Yu. V.</creatorcontrib><creatorcontrib>Plotnikov, A. F.</creatorcontrib><collection>CrossRef</collection><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kolosov, S. A.</au><au>Klevkov, Yu. V.</au><au>Plotnikov, A. F.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Electrical properties of fine-grained polycrystalline CdTe</atitle><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle><date>2004-04</date><risdate>2004</risdate><volume>38</volume><issue>4</issue><spage>455</spage><epage>460</epage><pages>455-460</pages><issn>1063-7826</issn><eissn>1090-6479</eissn><doi>10.1134/1.1734674</doi><tpages>6</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 1063-7826 |
| ispartof | Semiconductors (Woodbury, N.Y.), 2004-04, Vol.38 (4), p.455-460 |
| issn | 1063-7826 1090-6479 |
| language | eng |
| recordid | cdi_crossref_primary_10_1134_1_1734674 |
| source | SpringerNature Journals |
| title | Electrical properties of fine-grained polycrystalline CdTe |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-19T02%3A52%3A11IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Electrical%20properties%20of%20fine-grained%20polycrystalline%20CdTe&rft.jtitle=Semiconductors%20(Woodbury,%20N.Y.)&rft.au=Kolosov,%20S.%20A.&rft.date=2004-04&rft.volume=38&rft.issue=4&rft.spage=455&rft.epage=460&rft.pages=455-460&rft.issn=1063-7826&rft.eissn=1090-6479&rft_id=info:doi/10.1134/1.1734674&rft_dat=%3Ccrossref%3E10_1134_1_1734674%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |