Hopping polarization photoconductivity of silicon with the involvement of impurity pairs of groups III and V

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Semiconductors (Woodbury, N.Y.) N.Y.), 2003-11, Vol.37 (11), p.1266-1274
Hauptverfasser:	Pokrovskii, Ya. E., Khval’kovskii, N. A.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

container_end_page	1274
container_issue	11
container_start_page	1266
container_title	Semiconductors (Woodbury, N.Y.)
container_volume	37
creator	Pokrovskii, Ya. E. Khval’kovskii, N. A.
description
doi_str_mv	10.1134/1.1626206
format	Article
fullrecord	<record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1134_1_1626206</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1134_1_1626206</sourcerecordid><originalsourceid>FETCH-LOGICAL-c187t-654c27580e3de6cfe7c8b2670f836bf7555505acdbeebf5e1affa666c3bac56d3</originalsourceid><addsrcrecordid>eNotULFOwzAUtBBIlMLAH3hlSLHj-DkdUQU0UiUWYI0cx26MktiynaLy9TRqb7nT3emGQ-iRkhWlrHimKwo55ASu0IKSNcmgEOvrWQPLRJnDLbqL8YcQSkteLFC_dd7bcY-962WwfzJZN2LfueSUG9tJJXuw6YidwdH29uThX5s6nDqN7Xhw_UEPekxzbgc_hbnrpQ1xdvbBTT7iqqqwHFv8fY9ujOyjfrjwEn29vX5uttnu473avOwyRUuRMuCFygUviWatBmW0UGWTgyCmZNAYwU8gXKq20boxXFNpjAQAxRqpOLRsiZ7Ouyq4GIM2tQ92kOFYU1LPN9W0vtzE_gHkA10g</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Hopping polarization photoconductivity of silicon with the involvement of impurity pairs of groups III and V</title><source>SpringerLink Journals - AutoHoldings</source><creator>Pokrovskii, Ya. E. ; Khval’kovskii, N. A.</creator><creatorcontrib>Pokrovskii, Ya. E. ; Khval’kovskii, N. A.</creatorcontrib><identifier>ISSN: 1063-7826</identifier><identifier>EISSN: 1090-6479</identifier><identifier>DOI: 10.1134/1.1626206</identifier><language>eng</language><ispartof>Semiconductors (Woodbury, N.Y.), 2003-11, Vol.37 (11), p.1266-1274</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c187t-654c27580e3de6cfe7c8b2670f836bf7555505acdbeebf5e1affa666c3bac56d3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Pokrovskii, Ya. E.</creatorcontrib><creatorcontrib>Khval’kovskii, N. A.</creatorcontrib><title>Hopping polarization photoconductivity of silicon with the involvement of impurity pairs of groups III and V</title><title>Semiconductors (Woodbury, N.Y.)</title><issn>1063-7826</issn><issn>1090-6479</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2003</creationdate><recordtype>article</recordtype><recordid>eNotULFOwzAUtBBIlMLAH3hlSLHj-DkdUQU0UiUWYI0cx26MktiynaLy9TRqb7nT3emGQ-iRkhWlrHimKwo55ASu0IKSNcmgEOvrWQPLRJnDLbqL8YcQSkteLFC_dd7bcY-962WwfzJZN2LfueSUG9tJJXuw6YidwdH29uThX5s6nDqN7Xhw_UEPekxzbgc_hbnrpQ1xdvbBTT7iqqqwHFv8fY9ujOyjfrjwEn29vX5uttnu473avOwyRUuRMuCFygUviWatBmW0UGWTgyCmZNAYwU8gXKq20boxXFNpjAQAxRqpOLRsiZ7Ouyq4GIM2tQ92kOFYU1LPN9W0vtzE_gHkA10g</recordid><startdate>200311</startdate><enddate>200311</enddate><creator>Pokrovskii, Ya. E.</creator><creator>Khval’kovskii, N. A.</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>200311</creationdate><title>Hopping polarization photoconductivity of silicon with the involvement of impurity pairs of groups III and V</title><author>Pokrovskii, Ya. E. ; Khval’kovskii, N. A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c187t-654c27580e3de6cfe7c8b2670f836bf7555505acdbeebf5e1affa666c3bac56d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2003</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Pokrovskii, Ya. E.</creatorcontrib><creatorcontrib>Khval’kovskii, N. A.</creatorcontrib><collection>CrossRef</collection><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Pokrovskii, Ya. E.</au><au>Khval’kovskii, N. A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Hopping polarization photoconductivity of silicon with the involvement of impurity pairs of groups III and V</atitle><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle><date>2003-11</date><risdate>2003</risdate><volume>37</volume><issue>11</issue><spage>1266</spage><epage>1274</epage><pages>1266-1274</pages><issn>1063-7826</issn><eissn>1090-6479</eissn><doi>10.1134/1.1626206</doi><tpages>9</tpages></addata></record>
fulltext	fulltext
identifier	ISSN: 1063-7826
ispartof	Semiconductors (Woodbury, N.Y.), 2003-11, Vol.37 (11), p.1266-1274
issn	1063-7826 1090-6479
language	eng
recordid	cdi_crossref_primary_10_1134_1_1626206
source	SpringerLink Journals - AutoHoldings
title	Hopping polarization photoconductivity of silicon with the involvement of impurity pairs of groups III and V
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-03T16%3A43%3A01IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Hopping%20polarization%20photoconductivity%20of%20silicon%20with%20the%20involvement%20of%20impurity%20pairs%20of%20groups%20III%20and%20V&rft.jtitle=Semiconductors%20(Woodbury,%20N.Y.)&rft.au=Pokrovskii,%20Ya.%20E.&rft.date=2003-11&rft.volume=37&rft.issue=11&rft.spage=1266&rft.epage=1274&rft.pages=1266-1274&rft.issn=1063-7826&rft.eissn=1090-6479&rft_id=info:doi/10.1134/1.1626206&rft_dat=%3Ccrossref%3E10_1134_1_1626206%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true