Intrinsic photoconductivity of copper-doped gallium phosphide
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| Veröffentlicht in: | Semiconductors (Woodbury, N.Y.) N.Y.), 1999-08, Vol.33 (8), p.838-841 |
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| Sprache: | eng |
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| container_end_page | 841 |
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| container_issue | 8 |
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| container_title | Semiconductors (Woodbury, N.Y.) |
| container_volume | 33 |
| creator | Pribylov, N. N. Buslov, V. A. Rembeza, S. I. Spirin, A. I. Sushkov, S. A. |
| description | |
| doi_str_mv | 10.1134/1.1187632 |
| format | Article |
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| identifier | ISSN: 1063-7826 |
| ispartof | Semiconductors (Woodbury, N.Y.), 1999-08, Vol.33 (8), p.838-841 |
| issn | 1063-7826 1090-6479 |
| language | eng |
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| source | SpringerLink Journals - AutoHoldings |
| title | Intrinsic photoconductivity of copper-doped gallium phosphide |
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