Simulation of heat and mass transfer during growth of silicon carbide single crystals

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Veröffentlicht in:	Semiconductors (Woodbury, N.Y.) N.Y.), 1997-07, Vol.31 (7), p.672-676
Hauptverfasser:	Kirillov, B. A., Bakin, A. S., Tairov, Yu. M., Solnyshkin, S. N.
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Sprache:	eng
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title	Simulation of heat and mass transfer during growth of silicon carbide single crystals
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