Comparison of BCl3, TiCl4, and SOCl2 chlorinating agents for atomic layer etching of TiO2 and ZrO2 using tungsten hexafluoride
Recent advances in the semiconductor industry have created an exigency for processes that allow to deposit and etch material in conformal matter in three-dimensional devices. While conformal deposition is achieved using atomic layer deposition (ALD), conformal etching can be accomplished by thermal...
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| Veröffentlicht in: | Journal of vacuum science & technology. A, Vacuum, surfaces, and films Vacuum, surfaces, and films, 2023-07, Vol.41 (4) |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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