Variation in thermal stability of Ge1−xSnx films for infrared device applications

We report on changes in Ge1−xSnx films (0.065 ≤ x ≤ 0.144) after short high-temperature anneals. Films were grown by molecular beam epitaxy on (001) Ge wafers, rapidly annealed, and characterized by x-ray diffraction, Raman spectroscopy, and optical microscopy. Sn segregated to the surface after a m...

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Veröffentlicht in:	Journal of vacuum science & technology. A, Vacuum, surfaces, and films Vacuum, surfaces, and films, 2023-09, Vol.41 (5)
Hauptverfasser:	Lemire, Amanda N., Grossklaus, Kevin A., Vandervelde, Thomas E.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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