Simulation analyses of carrier dynamics in npn-type GaN-heterojunction bipolar transistors with different hole-concentration p-base layers

In this study, the operation of npn-type GaN-based heterojunction bipolar transistors with different net acceptor concentrations in p-base regions was simulated. It was confirmed that there is a critical net acceptor concentration (NA-ND) depending on the thickness of the base region and that if the...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Journal of vacuum science and technology. B, Nanotechnology & microelectronics Nanotechnology & microelectronics, 2023-09, Vol.41 (5)
Hauptverfasser:	Mase, Akira, Iida, Yusuke, Takimoto, Masaya, Nikai, Yutaka, Egawa, Takashi, Miyoshi, Makoto
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!