High thickness uniformity of 2-in. wafer-scale β-Ga2O3 films grown by MOCVD and photoelectrical properties

In this study, 2-in. wafer-scale large-area β-Ga2O3 epitaxial films were fabricated on c-plane sapphire substrates via metal-organic chemical vapor deposition. X-ray diffraction, atomic force microscopy, field-emission scanning electron microscope, and photoelectric properties were carried out to di...

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Veröffentlicht in:	Journal of vacuum science & technology. A, Vacuum, surfaces, and films Vacuum, surfaces, and films, 2022-12, Vol.40 (6)
Hauptverfasser:	Yue, Jianying, Ji, Xueqiang, Li, Shan, Yan, Zuyong, Qi, Xiaohui, Li, Peigang, Tang, Weihua
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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