Atomic-layer etching of GaN by using an HBr neutral beam

In the gate-recess formation process, normally-off operation is achieved by removing the barrier layer by dry etching to reduce the two-dimensional-electron-gas concentration under the gate electrode. An atomic-layer defect-free etching of GaN is thus indispensable to achieve high-frequency, high-po...

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Veröffentlicht in:	Journal of vacuum science & technology. A, Vacuum, surfaces, and films Vacuum, surfaces, and films, 2020-05, Vol.38 (3)
Hauptverfasser:	Ohori, Daisuke, Sawada, Takahiro, Sugawara, Kenta, Okada, Masaya, Nakata, Ken, Inoue, Kazutaka, Sato, Daisuke, Kurihara, Hideyuki, Samukawa, Seiji
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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