Patterning of 0.175 μm platinum features using Ar/O2 chemically assisted ion-beam etching

Argon/oxygen based chemically assisted ion-beam etching has been investigated for the patterning of stacked capacitor platinum electrodes at ground rules of 200 nm and below. Titanium nitride and bilayers of titanium on top of titanium nitride were used as hard mask layers in the patterning of the p...

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Veröffentlicht in:	Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena Microelectronics and nanometer structures processing, measurement and phenomena, 2000-03, Vol.18 (2), p.765-773
Hauptverfasser:	Gutsche, Martin U., Athavale, Satish D., Williams, Kurt, Hines, Danielle
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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