Effectiveness of Ti, TiN, Ta, TaN, and W2N as barriers for the integration of low- k dielectric hydrogen silsesquioxane

The interactions between low-k (dielectric constant) material hydrogen silsesquioxane (HSQ) and barrier layers, Ti, Ta, physical-vapor deposited (PVD), and chemical-vapor deposited (CVD) TiN, PVD TaN, and CVD W2N, have been investigated by using sheet-resistance measurement, x-ray diffraction, trans...

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Veröffentlicht in:	Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena Microelectronics and nanometer structures processing, measurement and phenomena, 2000-01, Vol.18 (1), p.221-230
Hauptverfasser:	Zeng, Yuxiao, Russell, Stephen W., McKerrow, Andrew J., Chen, Linghui, Alford, T. L.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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