Double-gated microtip emitters for brighter field-emission displays
Reducing the aperture of the beams emitted by microtips is important to increase the luminance of field-emission displays. Double-gated microtip emitters have been fabricated where the second gate is used to focus the beam emitted by the tip under the action of the attracting field produced by the f...
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| Veröffentlicht in: | Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films Surfaces, and Films, 2000-03, Vol.18 (2), p.626-629 |
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| container_end_page | 629 |
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| container_issue | 2 |
| container_start_page | 626 |
| container_title | Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films |
| container_volume | 18 |
| creator | Py, Christophe Gao, Mae Das, Suhit R. Grant, Peter Marshall, Paul LeBrun, Leslie |
| description | Reducing the aperture of the beams emitted by microtips is important to increase the luminance of field-emission displays. Double-gated microtip emitters have been fabricated where the second gate is used to focus the beam emitted by the tip under the action of the attracting field produced by the first gate. The first gate is designed in a volcano shape to shield the apex of the tip from the second gate that is recessed under the level of the first one. This is rendered possible by using a thin rf sputtered
SiO
2
layer with very good dielectric properties between the two gates. The beam aperture is reduced from
25°
to
7°
when the second gate is biased at a voltage 15 V lower than the tip. No reduction in emitted current is observed when the second gate is biased at that voltage, which results in an eightfold increase in current density. |
| doi_str_mv | 10.1116/1.582253 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1116_1_582253</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>746166759</sourcerecordid><originalsourceid>FETCH-LOGICAL-c456t-667d4536d0e070759cfd5d5456ada316fa8654cfa77e8bef8f3c40ba8bb373bb3</originalsourceid><addsrcrecordid>eNp9kE1LAzEQhoMoWKvgT9ibekhNNptke5RaP6DgRc8hm48a2TZrJhX6742s9CJ4mWGYh3fmfRG6pGRGKRW3dMbbuubsCE0orwluOZ8fowmRrME1JfQUnQF8EELqmogJWtzHXdc7vNbZ2WoTTIo5DJXbhJxdgsrHVHUprN_LVPngeovLDiDEbWUDDL3ewzk68boHd_Hbp-jtYfm6eMKrl8fnxd0Km4aLjIWQtuFMWOKIJJLPjbfc8rLTVjMqvG4Fb4zXUrq2c771zDSk023XMclKmaKrUXdI8XPnIKvyiXF9r7cu7kDJRtByhM8LeT2SxQ5Acl4NKWx02itK1E9MiqoxpoLejCiYkHUuvg7sV0wHTg3W_8f-0f0G6hF2PQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>746166759</pqid></control><display><type>article</type><title>Double-gated microtip emitters for brighter field-emission displays</title><source>AIP Journals Complete</source><creator>Py, Christophe ; Gao, Mae ; Das, Suhit R. ; Grant, Peter ; Marshall, Paul ; LeBrun, Leslie</creator><creatorcontrib>Py, Christophe ; Gao, Mae ; Das, Suhit R. ; Grant, Peter ; Marshall, Paul ; LeBrun, Leslie</creatorcontrib><description>Reducing the aperture of the beams emitted by microtips is important to increase the luminance of field-emission displays. Double-gated microtip emitters have been fabricated where the second gate is used to focus the beam emitted by the tip under the action of the attracting field produced by the first gate. The first gate is designed in a volcano shape to shield the apex of the tip from the second gate that is recessed under the level of the first one. This is rendered possible by using a thin rf sputtered
SiO
2
layer with very good dielectric properties between the two gates. The beam aperture is reduced from
25°
to
7°
when the second gate is biased at a voltage 15 V lower than the tip. No reduction in emitted current is observed when the second gate is biased at that voltage, which results in an eightfold increase in current density.</description><identifier>ISSN: 0734-2101</identifier><identifier>EISSN: 1520-8559</identifier><identifier>DOI: 10.1116/1.582253</identifier><identifier>CODEN: JVTAD6</identifier><language>eng</language><subject>Anodes ; Cathodes ; Current density ; Electric potential ; Flat panel displays ; Light emission ; Permittivity ; Silica ; Sputtering</subject><ispartof>Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 2000-03, Vol.18 (2), p.626-629</ispartof><rights>American Vacuum Society</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c456t-667d4536d0e070759cfd5d5456ada316fa8654cfa77e8bef8f3c40ba8bb373bb3</citedby><cites>FETCH-LOGICAL-c456t-667d4536d0e070759cfd5d5456ada316fa8654cfa77e8bef8f3c40ba8bb373bb3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>309,310,314,776,780,785,786,790,4498,23909,23910,25118,27901,27902</link.rule.ids></links><search><creatorcontrib>Py, Christophe</creatorcontrib><creatorcontrib>Gao, Mae</creatorcontrib><creatorcontrib>Das, Suhit R.</creatorcontrib><creatorcontrib>Grant, Peter</creatorcontrib><creatorcontrib>Marshall, Paul</creatorcontrib><creatorcontrib>LeBrun, Leslie</creatorcontrib><title>Double-gated microtip emitters for brighter field-emission displays</title><title>Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films</title><description>Reducing the aperture of the beams emitted by microtips is important to increase the luminance of field-emission displays. Double-gated microtip emitters have been fabricated where the second gate is used to focus the beam emitted by the tip under the action of the attracting field produced by the first gate. The first gate is designed in a volcano shape to shield the apex of the tip from the second gate that is recessed under the level of the first one. This is rendered possible by using a thin rf sputtered
SiO
2
layer with very good dielectric properties between the two gates. The beam aperture is reduced from
25°
to
7°
when the second gate is biased at a voltage 15 V lower than the tip. No reduction in emitted current is observed when the second gate is biased at that voltage, which results in an eightfold increase in current density.</description><subject>Anodes</subject><subject>Cathodes</subject><subject>Current density</subject><subject>Electric potential</subject><subject>Flat panel displays</subject><subject>Light emission</subject><subject>Permittivity</subject><subject>Silica</subject><subject>Sputtering</subject><issn>0734-2101</issn><issn>1520-8559</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2000</creationdate><recordtype>article</recordtype><recordid>eNp9kE1LAzEQhoMoWKvgT9ibekhNNptke5RaP6DgRc8hm48a2TZrJhX6742s9CJ4mWGYh3fmfRG6pGRGKRW3dMbbuubsCE0orwluOZ8fowmRrME1JfQUnQF8EELqmogJWtzHXdc7vNbZ2WoTTIo5DJXbhJxdgsrHVHUprN_LVPngeovLDiDEbWUDDL3ewzk68boHd_Hbp-jtYfm6eMKrl8fnxd0Km4aLjIWQtuFMWOKIJJLPjbfc8rLTVjMqvG4Fb4zXUrq2c771zDSk023XMclKmaKrUXdI8XPnIKvyiXF9r7cu7kDJRtByhM8LeT2SxQ5Acl4NKWx02itK1E9MiqoxpoLejCiYkHUuvg7sV0wHTg3W_8f-0f0G6hF2PQ</recordid><startdate>20000301</startdate><enddate>20000301</enddate><creator>Py, Christophe</creator><creator>Gao, Mae</creator><creator>Das, Suhit R.</creator><creator>Grant, Peter</creator><creator>Marshall, Paul</creator><creator>LeBrun, Leslie</creator><scope>AAYXX</scope><scope>CITATION</scope><scope>7TC</scope></search><sort><creationdate>20000301</creationdate><title>Double-gated microtip emitters for brighter field-emission displays</title><author>Py, Christophe ; Gao, Mae ; Das, Suhit R. ; Grant, Peter ; Marshall, Paul ; LeBrun, Leslie</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c456t-667d4536d0e070759cfd5d5456ada316fa8654cfa77e8bef8f3c40ba8bb373bb3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2000</creationdate><topic>Anodes</topic><topic>Cathodes</topic><topic>Current density</topic><topic>Electric potential</topic><topic>Flat panel displays</topic><topic>Light emission</topic><topic>Permittivity</topic><topic>Silica</topic><topic>Sputtering</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Py, Christophe</creatorcontrib><creatorcontrib>Gao, Mae</creatorcontrib><creatorcontrib>Das, Suhit R.</creatorcontrib><creatorcontrib>Grant, Peter</creatorcontrib><creatorcontrib>Marshall, Paul</creatorcontrib><creatorcontrib>LeBrun, Leslie</creatorcontrib><collection>CrossRef</collection><collection>Mechanical Engineering Abstracts</collection><jtitle>Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Py, Christophe</au><au>Gao, Mae</au><au>Das, Suhit R.</au><au>Grant, Peter</au><au>Marshall, Paul</au><au>LeBrun, Leslie</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Double-gated microtip emitters for brighter field-emission displays</atitle><jtitle>Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films</jtitle><date>2000-03-01</date><risdate>2000</risdate><volume>18</volume><issue>2</issue><spage>626</spage><epage>629</epage><pages>626-629</pages><issn>0734-2101</issn><eissn>1520-8559</eissn><coden>JVTAD6</coden><abstract>Reducing the aperture of the beams emitted by microtips is important to increase the luminance of field-emission displays. Double-gated microtip emitters have been fabricated where the second gate is used to focus the beam emitted by the tip under the action of the attracting field produced by the first gate. The first gate is designed in a volcano shape to shield the apex of the tip from the second gate that is recessed under the level of the first one. This is rendered possible by using a thin rf sputtered
SiO
2
layer with very good dielectric properties between the two gates. The beam aperture is reduced from
25°
to
7°
when the second gate is biased at a voltage 15 V lower than the tip. No reduction in emitted current is observed when the second gate is biased at that voltage, which results in an eightfold increase in current density.</abstract><doi>10.1116/1.582253</doi><tpages>4</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0734-2101 |
| ispartof | Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 2000-03, Vol.18 (2), p.626-629 |
| issn | 0734-2101 1520-8559 |
| language | eng |
| recordid | cdi_crossref_primary_10_1116_1_582253 |
| source | AIP Journals Complete |
| subjects | Anodes Cathodes Current density Electric potential Flat panel displays Light emission Permittivity Silica Sputtering |
| title | Double-gated microtip emitters for brighter field-emission displays |
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