Pulsed and continuous wave plasma deposition of amorphous, hydrogenated silicon carbide from SiH4/CH4 plasmas

Continuous wave (cw) and equivalently powered, pulsed radio frequency plasmas are used to deposit a-Si1−xCx:H films. Films produced from SiH4/CH4 and SiH4/CH4/H2 gas mixtures were analyzed with Fourier-transform infrared, x-ray photoelectron spectroscopy, scanning electron microscopy, and profilomet...

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Veröffentlicht in:	Journal of vacuum science & technology. A, Vacuum, surfaces, and films Vacuum, surfaces, and films, 1999-09, Vol.17 (5), p.2475-2484
Hauptverfasser:	McCurdy, Patrick R., Truitt, Jason M., Fisher, Ellen R.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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