Phenol-functionalized polymerization control additives for negative tone epoxide crosslinking molecular resists

Controlling undesired polymerization in nominally unexposed regions is critical to achieving high-resolution, defect-free patterns when using negative tone molecular resists based on the crosslinking of epoxides. Two onium salt additives, a photodecomposable nucleophile (PDN) and a photoacid generat...

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Veröffentlicht in:Journal of vacuum science and technology. B, Nanotechnology & microelectronics Nanotechnology & microelectronics, 2018-11, Vol.36 (6)
Hauptverfasser: Narcross, Hannah, Sharp, Brandon L., Ludovice, Peter J., Tolbert, Laren M., Henderson, Clifford L.
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container_issue 6
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container_title Journal of vacuum science and technology. B, Nanotechnology & microelectronics
container_volume 36
creator Narcross, Hannah
Sharp, Brandon L.
Ludovice, Peter J.
Tolbert, Laren M.
Henderson, Clifford L.
description Controlling undesired polymerization in nominally unexposed regions is critical to achieving high-resolution, defect-free patterns when using negative tone molecular resists based on the crosslinking of epoxides. Two onium salt additives, a photodecomposable nucleophile (PDN) and a photoacid generator (PAG), were functionalized with phenols in order to investigate their use as generalized additives capable of slowing crosslinking and improving the resolution of a variety of epoxide resists. Presented here is a phenol-functionalized PDN [tris(4-hydroxyphenyl)sulfonium triflate (TPS-OH-Tf)] and a phenol-functionalized PAG [tris(4-hydroxyphenyl)sulfonium antimonate (TPS-OH-SbF6)] used in combination with a model epoxide resist (4-Ep). Utilizing additives that contained phenols resulted in a decrease in resist sensitivity, but enabled higher additive loadings which could be used to offset this loss in sensitivity. Using TPS-OH-SbF6 did not provide enough polymerization control to prevent line broadening, and the use of TPS-OH-Tf was still required to achieve sub 35 nm 1:1 line:space patterns. Adding TPS-OH-Tf was also found to improve pattern collapse behavior at reduced (
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Initial patterning using 100 keV electron-beam lithography showed that the resolution of 4-Ep was improved to 15 nm 1:1 line:space patterns using these phenol-functionalized additives and demonstrate the potential of these additives to improve the resolution of a variety of epoxide crosslinking molecular resists.</description><identifier>ISSN: 2166-2746</identifier><identifier>EISSN: 2166-2754</identifier><identifier>DOI: 10.1116/1.5057442</identifier><identifier>CODEN: JVTBD9</identifier><language>eng</language><ispartof>Journal of vacuum science and technology. 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title Phenol-functionalized polymerization control additives for negative tone epoxide crosslinking molecular resists
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