New insights on the chemistry of plasma-enhanced atomic layer deposition of indium oxysulfide thin films and their use as buffer layers in Cu(In,Ga)Se2 thin film solar cell

A comparative chemical analysis of InxSy and In2(S,O)3 thin films grown by atomic layer deposition (ALD) and plasma-enhanced ALD, respectively, was performed to understand the challenges and issues related to the assistance of plasma, especially for the implementation of these films as ultrathin (

Bibliographische Detailangaben

Veröffentlicht in:	Journal of vacuum science & technology. A, Vacuum, surfaces, and films Vacuum, surfaces, and films, 2018-11, Vol.36 (6)
Hauptverfasser:	Bugot, Cathy, Bouttemy, Muriel, Schneider, Nathanaelle, Etcheberry, Arnaud, Lincot, Daniel, Donsanti, Frédérique
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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