New insights on the chemistry of plasma-enhanced atomic layer deposition of indium oxysulfide thin films and their use as buffer layers in Cu(In,Ga)Se2 thin film solar cell
A comparative chemical analysis of InxSy and In2(S,O)3 thin films grown by atomic layer deposition (ALD) and plasma-enhanced ALD, respectively, was performed to understand the challenges and issues related to the assistance of plasma, especially for the implementation of these films as ultrathin (
Gespeichert in:
Veröffentlicht in: | Journal of vacuum science & technology. A, Vacuum, surfaces, and films Vacuum, surfaces, and films, 2018-11, Vol.36 (6) |
---|---|
Hauptverfasser: | , , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | A comparative chemical analysis of InxSy and In2(S,O)3 thin films grown by atomic layer deposition (ALD) and plasma-enhanced ALD, respectively, was performed to understand the challenges and issues related to the assistance of plasma, especially for the implementation of these films as ultrathin ( |
---|---|
ISSN: | 0734-2101 1520-8559 |
DOI: | 10.1116/1.5048124 |