Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors

In this manuscript, the authors investigate the growth of indium zinc oxide, indium zinc oxide (InZnO, IZO) as a channel material for thin-film transistors. IZO is grown at atmospheric pressure and a high deposition rate using spatial atomic layer deposition (S-ALD). By varying the ratio of diethylz...

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Veröffentlicht in:	Journal of vacuum science & technology. A, Vacuum, surfaces, and films Vacuum, surfaces, and films, 2018-07, Vol.36 (4)
Hauptverfasser:	Illiberi, Andrea, Katsouras, Ilias, Gazibegovic, Sasa, Cobb, Brian, Nekovic, Elida, van Boekel, Willem, Frijters, Corne, Maas, Joris, Roozeboom, Fred, Creyghton, Yves, Poodt, Paul, Gelinck, Gerwin
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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