Effect of deposition conditions and composition on band offsets in atomic layer deposited HfxSi1−xOy on InGaZnO4

HfO2 or HfxSi1−xO4 (consisting of HfO2/SiO2 multilayers) were deposited at 200 °C by atomic layer deposition (ALD) onto a-InGaZnO4 (IGZO) layers deposited by sputtering at room temperature and the band offsets in the HfxSi1−xOy/InGaZnO4 heterostructures determined by x-ray photoelectron spectroscopy...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Journal of vacuum science and technology. B, Nanotechnology & microelectronics Nanotechnology & microelectronics, 2017-01, Vol.35 (1)
Hauptverfasser:	Hays, David C., Gila, Brent P., Pearton, Stephen J., Trucco, Andres, Thorpe, Ryan, Ren, Fan
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!