Electrical properties related to growth defects in metamorphic GaSb films on Si

This paper reports on correlation of growth-related defects and electrical properties in GaSb films grown on different Si substrates using metamorphic buffers. Large lattice mismatch between GaSb and Si (∼11%) results in the formation of threading dislocations (TDs) and microtwins (MTs) along with a...

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Veröffentlicht in:	Journal of vacuum science and technology. B, Nanotechnology & microelectronics Nanotechnology & microelectronics, 2017-01, Vol.35 (1)
Hauptverfasser:	Sasaki, Shun, Dropiewski, Katie, Madisetti, Shailesh, Tokranov, Vadim, Yakimov, Michael, Oktyabrsky, Serge, Bentley, Steven, Galatage, Rohit, Jacob, Ajey P.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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