Reliability improvements of TiN/Al2O3/TiN for linear high voltage metal–insulator–metal capacitors using an optimized thermal treatment

Metal–insulator–metal (MIM) capacitors with TiN and high thickness of Al2O3 above 50 nm were fabricated to address high voltage (>30 V) and linear capacitor applications. Atomic layer deposition is used to deposit both TiN and Al2O3 to guarantee a good composition and thickness control. The impac...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Journal of vacuum science and technology. B, Nanotechnology & microelectronics Nanotechnology & microelectronics, 2017-01, Vol.35 (1)
Hauptverfasser:	Lefevre, Aude, Ferreira, Delphine, Veillerot, Marc, Barnes, Jean-Paul, Parat, Guy, Czernohorsky, Malte, Lallemand, Florent
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!