Low-temperature-atomic-layer-deposition of SiO2 using various organic precursors

Low-temperature-atomic-layer-deposition of SiO2 using various organic precursors

The low-temperature-atomic layer deposition (ALD) of SiO2 has a lot of applications in semiconductor devices. Moreover, it is hard to control the conformality and reproducibility in high aspect ratio structures. In this study, the authors investigated the ALD behaviors of SiO2 using various precurso...

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Veröffentlicht in:Journal of vacuum science & technology. A, Vacuum, surfaces, and films Vacuum, surfaces, and films, 2017-01, Vol.35 (1)
Hauptverfasser: Ahn, Sehyoung, Kim, Yunsu, Kang, Sangyeoul, Im, Kivin, Lim, Hanjin
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container_title Journal of vacuum science & technology. A, Vacuum, surfaces, and films
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creator Ahn, Sehyoung
Kim, Yunsu
Kang, Sangyeoul
Im, Kivin
Lim, Hanjin
description The low-temperature-atomic layer deposition (ALD) of SiO2 has a lot of applications in semiconductor devices. Moreover, it is hard to control the conformality and reproducibility in high aspect ratio structures. In this study, the authors investigated the ALD behaviors of SiO2 using various precursors in both 2D and 3D structures. It was shown that a high level of thickness control and perfect surface coverage techniques can be achieved even on a 200:1 aspect ratio structure at a low growth temperature of 250 °C by using bis(ethyl-methylamino)silane.
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title Low-temperature-atomic-layer-deposition of SiO2 using various organic precursors
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