Order-of-magnitude differences in retention of low-energy Ar implanted in Si and SiO2

The retention of 1 and 5 keV Ar implanted at 45° in Si and 4.3 nm SiO2 on Si was studied at fluences between 3 × 1014 and 1.5 × 1016 cm−2. X-ray photoelectron spectroscopy (XPS) served to monitor the accumulation of Ar as well as the removal of SiO2. Bombardment induced changes in oxygen chemistry c...

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Veröffentlicht in:	Journal of vacuum science & technology. A, Vacuum, surfaces, and films Vacuum, surfaces, and films, 2016-09, Vol.34 (5)
Hauptverfasser:	Wittmaack, Klaus, Giordani, Andrew, Umbel, Rachel, Hunter, Jerry L.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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