Formation of homologous In2O3(ZnO) m thin films and its thermoelectric properties

Homologous In2O3(ZnO)5 thin films were produced on a synthetic quartz glass substrate by thermal annealing of magnetron sputtered In2O3-ZnO compound films. When the annealing temperature was increased to 700 °C, the sputtered In2O3-ZnO film with In2O3 microcrystalline changed to a c-oriented homolog...

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Veröffentlicht in:	Journal of vacuum science & technology. A, Vacuum, surfaces, and films Vacuum, surfaces, and films, 2016-07, Vol.34 (4)
Hauptverfasser:	Jia, Junjun, Ow-Yang, Cleva, Inan Akmehmet, Güliz, Nakamura, Shin-ichi, Kato, Kunihisa, Shigesato, Yuzo
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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