Fabrication of low grass, smooth sidewall InGaAsP by methane–hydrogen inductively coupled plasma RIE through a metal lift-off mask patterned by e-beam lithography

Fabrication of low grass, smooth sidewall InGaAsP by methane–hydrogen inductively coupled plasma RIE through a metal lift-off mask patterned by e-beam lithography

An optimized CH4+H2 inductively coupled-plasma reactive-ion-etching process for fabrication of high quality nanophotonic InGaAsP/InP waveguide device has been developed. Important parameters that influence e-beam lithography and etching have been optimized for a simple metal lift-off masked process....

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Veröffentlicht in:Journal of vacuum science and technology. B, Nanotechnology & microelectronics Nanotechnology & microelectronics, 2015-09, Vol.33 (5)
Hauptverfasser: Sadasivan, Viswas, Dagar, Shikha, Das, Utpal
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container_title Journal of vacuum science and technology. B, Nanotechnology & microelectronics
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creator Sadasivan, Viswas
Dagar, Shikha
Das, Utpal
description An optimized CH4+H2 inductively coupled-plasma reactive-ion-etching process for fabrication of high quality nanophotonic InGaAsP/InP waveguide device has been developed. Important parameters that influence e-beam lithography and etching have been optimized for a simple metal lift-off masked process. Smooth sidewalls with low grass content has been demonstrated for >3 μm etch depths in InGaAsP/InP using an Al lift-off etch mask.
doi_str_mv 10.1116/1.4929437
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title Fabrication of low grass, smooth sidewall InGaAsP by methane–hydrogen inductively coupled plasma RIE through a metal lift-off mask patterned by e-beam lithography
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