Resistive switching in nonplanar HfO2-based structures with variable series resistance

Resistive switching in nonplanar HfO2-based structures with variable series resistance

The authors have prepared μm-sized HfO2-based nonplanar resistive switching cells with TiN and Pt electrodes. The structures exhibited stable resistive switching loops with low resistance state current below 1 mA. The influence of series resistance of the TiN strip electrode on the switching charact...

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Veröffentlicht in:Journal of vacuum science and technology. B, Nanotechnology & microelectronics Nanotechnology & microelectronics, 2015-01, Vol.33 (1)
Hauptverfasser: Čičo, Karol, Jančovič, Peter, Dérer, Jan, Šmatko, Vasilij, Rosová, Alica, Blaho, Michal, Hudec, Boris, Gregušová, Dagmar, Fröhlich, Karol
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container_title Journal of vacuum science and technology. B, Nanotechnology & microelectronics
container_volume 33
creator Čičo, Karol
Jančovič, Peter
Dérer, Jan
Šmatko, Vasilij
Rosová, Alica
Blaho, Michal
Hudec, Boris
Gregušová, Dagmar
Fröhlich, Karol
description The authors have prepared μm-sized HfO2-based nonplanar resistive switching cells with TiN and Pt electrodes. The structures exhibited stable resistive switching loops with low resistance state current below 1 mA. The influence of series resistance of the TiN strip electrode on the switching characteristics was measured and simulated. It was shown that the series resistance reduces the low state resistance current as well as high to low resistance state ratio.
doi_str_mv 10.1116/1.4905727
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fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1116_1_4905727</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1116_1_4905727</sourcerecordid><originalsourceid>FETCH-LOGICAL-c229t-7acb512370f0fece65cecb6cdef52ac09129536dae5c298b7ae4432c1c25b7f33</originalsourceid><addsrcrecordid>eNo9UMFKAzEUDKJgqT34B7l62Jq8bJLuUYraQqEg6nVJ3r7YSE1Lsq34965anMsMw8wchrFrKaZSSnMrp3UjtAV7xkYgjanA6vr8X9fmkk1KeRcDzEwLJUbs9YlKLH08Ei-fscdNTG88Jp52ab91yWW-CGuovCvU8dLnA_aHTIUP2Q0_uhyd3w5VynEw8--WS0hX7CK4baHJicfs5eH-eb6oVuvH5fxuVSFA01fWodcSlBVBBEIyGgm9wY6CBoeikdBoZTpHGqGZeeuorhWgRNDeBqXG7OZvF_OulEyh3ef44fJXK0X780kr29Mn6huMEVVI</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Resistive switching in nonplanar HfO2-based structures with variable series resistance</title><source>AIP Journals Complete</source><source>Alma/SFX Local Collection</source><creator>Čičo, Karol ; Jančovič, Peter ; Dérer, Jan ; Šmatko, Vasilij ; Rosová, Alica ; Blaho, Michal ; Hudec, Boris ; Gregušová, Dagmar ; Fröhlich, Karol</creator><creatorcontrib>Čičo, Karol ; Jančovič, Peter ; Dérer, Jan ; Šmatko, Vasilij ; Rosová, Alica ; Blaho, Michal ; Hudec, Boris ; Gregušová, Dagmar ; Fröhlich, Karol</creatorcontrib><description>The authors have prepared μm-sized HfO2-based nonplanar resistive switching cells with TiN and Pt electrodes. The structures exhibited stable resistive switching loops with low resistance state current below 1 mA. The influence of series resistance of the TiN strip electrode on the switching characteristics was measured and simulated. It was shown that the series resistance reduces the low state resistance current as well as high to low resistance state ratio.</description><identifier>ISSN: 2166-2746</identifier><identifier>EISSN: 2166-2754</identifier><identifier>DOI: 10.1116/1.4905727</identifier><language>eng</language><ispartof>Journal of vacuum science and technology. B, Nanotechnology &amp; microelectronics, 2015-01, Vol.33 (1)</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c229t-7acb512370f0fece65cecb6cdef52ac09129536dae5c298b7ae4432c1c25b7f33</citedby><cites>FETCH-LOGICAL-c229t-7acb512370f0fece65cecb6cdef52ac09129536dae5c298b7ae4432c1c25b7f33</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Čičo, Karol</creatorcontrib><creatorcontrib>Jančovič, Peter</creatorcontrib><creatorcontrib>Dérer, Jan</creatorcontrib><creatorcontrib>Šmatko, Vasilij</creatorcontrib><creatorcontrib>Rosová, Alica</creatorcontrib><creatorcontrib>Blaho, Michal</creatorcontrib><creatorcontrib>Hudec, Boris</creatorcontrib><creatorcontrib>Gregušová, Dagmar</creatorcontrib><creatorcontrib>Fröhlich, Karol</creatorcontrib><title>Resistive switching in nonplanar HfO2-based structures with variable series resistance</title><title>Journal of vacuum science and technology. B, Nanotechnology &amp; microelectronics</title><description>The authors have prepared μm-sized HfO2-based nonplanar resistive switching cells with TiN and Pt electrodes. The structures exhibited stable resistive switching loops with low resistance state current below 1 mA. The influence of series resistance of the TiN strip electrode on the switching characteristics was measured and simulated. It was shown that the series resistance reduces the low state resistance current as well as high to low resistance state ratio.</description><issn>2166-2746</issn><issn>2166-2754</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><recordid>eNo9UMFKAzEUDKJgqT34B7l62Jq8bJLuUYraQqEg6nVJ3r7YSE1Lsq34965anMsMw8wchrFrKaZSSnMrp3UjtAV7xkYgjanA6vr8X9fmkk1KeRcDzEwLJUbs9YlKLH08Ei-fscdNTG88Jp52ab91yWW-CGuovCvU8dLnA_aHTIUP2Q0_uhyd3w5VynEw8--WS0hX7CK4baHJicfs5eH-eb6oVuvH5fxuVSFA01fWodcSlBVBBEIyGgm9wY6CBoeikdBoZTpHGqGZeeuorhWgRNDeBqXG7OZvF_OulEyh3ef44fJXK0X780kr29Mn6huMEVVI</recordid><startdate>20150101</startdate><enddate>20150101</enddate><creator>Čičo, Karol</creator><creator>Jančovič, Peter</creator><creator>Dérer, Jan</creator><creator>Šmatko, Vasilij</creator><creator>Rosová, Alica</creator><creator>Blaho, Michal</creator><creator>Hudec, Boris</creator><creator>Gregušová, Dagmar</creator><creator>Fröhlich, Karol</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20150101</creationdate><title>Resistive switching in nonplanar HfO2-based structures with variable series resistance</title><author>Čičo, Karol ; Jančovič, Peter ; Dérer, Jan ; Šmatko, Vasilij ; Rosová, Alica ; Blaho, Michal ; Hudec, Boris ; Gregušová, Dagmar ; Fröhlich, Karol</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c229t-7acb512370f0fece65cecb6cdef52ac09129536dae5c298b7ae4432c1c25b7f33</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Čičo, Karol</creatorcontrib><creatorcontrib>Jančovič, Peter</creatorcontrib><creatorcontrib>Dérer, Jan</creatorcontrib><creatorcontrib>Šmatko, Vasilij</creatorcontrib><creatorcontrib>Rosová, Alica</creatorcontrib><creatorcontrib>Blaho, Michal</creatorcontrib><creatorcontrib>Hudec, Boris</creatorcontrib><creatorcontrib>Gregušová, Dagmar</creatorcontrib><creatorcontrib>Fröhlich, Karol</creatorcontrib><collection>CrossRef</collection><jtitle>Journal of vacuum science and technology. B, Nanotechnology &amp; microelectronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Čičo, Karol</au><au>Jančovič, Peter</au><au>Dérer, Jan</au><au>Šmatko, Vasilij</au><au>Rosová, Alica</au><au>Blaho, Michal</au><au>Hudec, Boris</au><au>Gregušová, Dagmar</au><au>Fröhlich, Karol</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Resistive switching in nonplanar HfO2-based structures with variable series resistance</atitle><jtitle>Journal of vacuum science and technology. B, Nanotechnology &amp; microelectronics</jtitle><date>2015-01-01</date><risdate>2015</risdate><volume>33</volume><issue>1</issue><issn>2166-2746</issn><eissn>2166-2754</eissn><abstract>The authors have prepared μm-sized HfO2-based nonplanar resistive switching cells with TiN and Pt electrodes. The structures exhibited stable resistive switching loops with low resistance state current below 1 mA. The influence of series resistance of the TiN strip electrode on the switching characteristics was measured and simulated. It was shown that the series resistance reduces the low state resistance current as well as high to low resistance state ratio.</abstract><doi>10.1116/1.4905727</doi></addata></record>
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title Resistive switching in nonplanar HfO2-based structures with variable series resistance
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-06T20%3A36%3A13IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Resistive%20switching%20in%20nonplanar%20HfO2-based%20structures%20with%20variable%20series%20resistance&rft.jtitle=Journal%20of%20vacuum%20science%20and%20technology.%20B,%20Nanotechnology%20&%20microelectronics&rft.au=%C4%8Ci%C4%8Do,%20Karol&rft.date=2015-01-01&rft.volume=33&rft.issue=1&rft.issn=2166-2746&rft.eissn=2166-2754&rft_id=info:doi/10.1116/1.4905727&rft_dat=%3Ccrossref%3E10_1116_1_4905727%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true