Characterization on p H sensing performance and structural properties of gadolinium oxide post-treated by nitrogen rapid thermal annealing

A detail investigation on the pH sensing performance of Gd2O3 layer was proposed in this work. Electrolyte–insulator–semiconductor (EIS) structure with Gd2O3 layer deposited directly on silicon by reactive radio frequency sputtering with Gd target was chosen as the testing platform. The postdepositi...

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Veröffentlicht in:	Journal of vacuum science and technology. B, Nanotechnology & microelectronics Nanotechnology & microelectronics, 2014-05, Vol.32 (3)
Hauptverfasser:	Yang, Chia-Ming, Wang, Chih-Yao, Lai, Chao-Sung
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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