Conduction processes in metal–insulator–metal diodes with Ta2O5 and Nb2O5 insulators deposited by atomic layer deposition
Metal–insulator–metal diodes with Nb2O5 and Ta2O5 insulators deposited via atomic layer deposition are investigated. For both Nb2O5 and Ta2O5, the dominant conduction process is established as Schottky emission at small biases and Frenkel–Poole emission at large biases. Fowler–Nordheim tunneling is...
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Veröffentlicht in: | Journal of vacuum science & technology. A, Vacuum, surfaces, and films Vacuum, surfaces, and films, 2014-01, Vol.32 (1) |
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container_title | Journal of vacuum science & technology. A, Vacuum, surfaces, and films |
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creator | Alimardani, Nasir McGlone, John M. Wager, John F. Conley, John F. |
description | Metal–insulator–metal diodes with Nb2O5 and Ta2O5 insulators deposited via atomic layer deposition are investigated. For both Nb2O5 and Ta2O5, the dominant conduction process is established as Schottky emission at small biases and Frenkel–Poole emission at large biases. Fowler–Nordheim tunneling is not found to play a role in determining current versus voltage asymmetry. The dynamic dielectric constants are extracted from conduction plots and found to be in agreement with measured optical dielectric constants. Trap energy levels at ϕT ≈ 0.62 and 0.53 eV below the conduction band minimum are estimated for Nb2O5 and Ta2O5, respectively. |
doi_str_mv | 10.1116/1.4843555 |
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fullrecord | <record><control><sourceid>scitation_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1116_1_4843555</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>scitation_primary_10_1116_1_4843555</sourcerecordid><originalsourceid>FETCH-LOGICAL-c229t-444ba04a3fd91b681123baf760711c6f90f9ee21815f168798897a2dc7a952163</originalsourceid><addsrcrecordid>eNp9kM1KAzEUhYMoWKsL3yBbham5mUkmWUrxD4rd6HrI5Acj08mQTJUuBN_BN_RJnNpaF4Krezj349zLQegUyAQA-AVMClHkjLE9NAJGSSYYk_toRMq8yCgQOERHKT0TQiglfITepqE1S9370OIuBm1Tsgn7Fi9sr5rP9w_fpmWj-hAH_e1h44MZmFffP-EHRecMq9bg-3qtdnTCxnYh-d4aXK_wYC28xo1a2fizGU4eowOnmmRPtnOMHq-vHqa32Wx-cze9nGWaUtlnRVHUihQqd0ZCzQUAzWvlSk5KAM2dJE5aS0EAc8BFKYWQpaJGl0oyCjwfo7NNro4hpWhd1UW_UHFVAanWvVVQbXsb2PMNm7Tv1frLHfwS4i9Ydcb9B_9N_gJ-pn7_</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Conduction processes in metal–insulator–metal diodes with Ta2O5 and Nb2O5 insulators deposited by atomic layer deposition</title><source>AIP Journals Complete</source><source>Alma/SFX Local Collection</source><creator>Alimardani, Nasir ; McGlone, John M. ; Wager, John F. ; Conley, John F.</creator><creatorcontrib>Alimardani, Nasir ; McGlone, John M. ; Wager, John F. ; Conley, John F.</creatorcontrib><description>Metal–insulator–metal diodes with Nb2O5 and Ta2O5 insulators deposited via atomic layer deposition are investigated. For both Nb2O5 and Ta2O5, the dominant conduction process is established as Schottky emission at small biases and Frenkel–Poole emission at large biases. Fowler–Nordheim tunneling is not found to play a role in determining current versus voltage asymmetry. The dynamic dielectric constants are extracted from conduction plots and found to be in agreement with measured optical dielectric constants. Trap energy levels at ϕT ≈ 0.62 and 0.53 eV below the conduction band minimum are estimated for Nb2O5 and Ta2O5, respectively.</description><identifier>ISSN: 0734-2101</identifier><identifier>EISSN: 1520-8559</identifier><identifier>DOI: 10.1116/1.4843555</identifier><identifier>CODEN: JVTAD6</identifier><language>eng</language><ispartof>Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2014-01, Vol.32 (1)</ispartof><rights>American Vacuum Society</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c229t-444ba04a3fd91b681123baf760711c6f90f9ee21815f168798897a2dc7a952163</citedby><cites>FETCH-LOGICAL-c229t-444ba04a3fd91b681123baf760711c6f90f9ee21815f168798897a2dc7a952163</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,794,4512,27924,27925</link.rule.ids></links><search><creatorcontrib>Alimardani, Nasir</creatorcontrib><creatorcontrib>McGlone, John M.</creatorcontrib><creatorcontrib>Wager, John F.</creatorcontrib><creatorcontrib>Conley, John F.</creatorcontrib><title>Conduction processes in metal–insulator–metal diodes with Ta2O5 and Nb2O5 insulators deposited by atomic layer deposition</title><title>Journal of vacuum science & technology. A, Vacuum, surfaces, and films</title><description>Metal–insulator–metal diodes with Nb2O5 and Ta2O5 insulators deposited via atomic layer deposition are investigated. For both Nb2O5 and Ta2O5, the dominant conduction process is established as Schottky emission at small biases and Frenkel–Poole emission at large biases. Fowler–Nordheim tunneling is not found to play a role in determining current versus voltage asymmetry. The dynamic dielectric constants are extracted from conduction plots and found to be in agreement with measured optical dielectric constants. Trap energy levels at ϕT ≈ 0.62 and 0.53 eV below the conduction band minimum are estimated for Nb2O5 and Ta2O5, respectively.</description><issn>0734-2101</issn><issn>1520-8559</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNp9kM1KAzEUhYMoWKsL3yBbham5mUkmWUrxD4rd6HrI5Acj08mQTJUuBN_BN_RJnNpaF4Krezj349zLQegUyAQA-AVMClHkjLE9NAJGSSYYk_toRMq8yCgQOERHKT0TQiglfITepqE1S9370OIuBm1Tsgn7Fi9sr5rP9w_fpmWj-hAH_e1h44MZmFffP-EHRecMq9bg-3qtdnTCxnYh-d4aXK_wYC28xo1a2fizGU4eowOnmmRPtnOMHq-vHqa32Wx-cze9nGWaUtlnRVHUihQqd0ZCzQUAzWvlSk5KAM2dJE5aS0EAc8BFKYWQpaJGl0oyCjwfo7NNro4hpWhd1UW_UHFVAanWvVVQbXsb2PMNm7Tv1frLHfwS4i9Ydcb9B_9N_gJ-pn7_</recordid><startdate>201401</startdate><enddate>201401</enddate><creator>Alimardani, Nasir</creator><creator>McGlone, John M.</creator><creator>Wager, John F.</creator><creator>Conley, John F.</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>201401</creationdate><title>Conduction processes in metal–insulator–metal diodes with Ta2O5 and Nb2O5 insulators deposited by atomic layer deposition</title><author>Alimardani, Nasir ; McGlone, John M. ; Wager, John F. ; Conley, John F.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c229t-444ba04a3fd91b681123baf760711c6f90f9ee21815f168798897a2dc7a952163</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Alimardani, Nasir</creatorcontrib><creatorcontrib>McGlone, John M.</creatorcontrib><creatorcontrib>Wager, John F.</creatorcontrib><creatorcontrib>Conley, John F.</creatorcontrib><collection>CrossRef</collection><jtitle>Journal of vacuum science & technology. A, Vacuum, surfaces, and films</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Alimardani, Nasir</au><au>McGlone, John M.</au><au>Wager, John F.</au><au>Conley, John F.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Conduction processes in metal–insulator–metal diodes with Ta2O5 and Nb2O5 insulators deposited by atomic layer deposition</atitle><jtitle>Journal of vacuum science & technology. A, Vacuum, surfaces, and films</jtitle><date>2014-01</date><risdate>2014</risdate><volume>32</volume><issue>1</issue><issn>0734-2101</issn><eissn>1520-8559</eissn><coden>JVTAD6</coden><abstract>Metal–insulator–metal diodes with Nb2O5 and Ta2O5 insulators deposited via atomic layer deposition are investigated. For both Nb2O5 and Ta2O5, the dominant conduction process is established as Schottky emission at small biases and Frenkel–Poole emission at large biases. Fowler–Nordheim tunneling is not found to play a role in determining current versus voltage asymmetry. The dynamic dielectric constants are extracted from conduction plots and found to be in agreement with measured optical dielectric constants. Trap energy levels at ϕT ≈ 0.62 and 0.53 eV below the conduction band minimum are estimated for Nb2O5 and Ta2O5, respectively.</abstract><doi>10.1116/1.4843555</doi><tpages>6</tpages></addata></record> |
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title | Conduction processes in metal–insulator–metal diodes with Ta2O5 and Nb2O5 insulators deposited by atomic layer deposition |
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