Direct charge measurements to read back stored data in nonvolatile memory devices using scanning capacitance microscopy

This paper describes a methodology for reading back electrical charges from nonvolatile memory (NVM)-based flash devices. These devices were programmed to store charges in the floating gates of the transistors. The primary goal is to identify and read back these static charges in the form of logic l...

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Veröffentlicht in:	Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 2013-11, Vol.31 (6), p.61801
Hauptverfasser:	Dhar, Rudra Sankar, Dixon-Warren, St. John, Campbell, Jeff, Kawaliye, Mohamed Abdi, Green, Mike, Ban, Dayan
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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