Insight into the multicomponent nature of negative bias temperature instability
A novel measurement technique is used to extract two physically distinct “permanent” (long lived on our experimental time scale, ≤12 000 s) and one recoverable charge components of the negative bias temperature instability in p-channel metal–oxide–semiconductor field effect transistors under inversi...
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Veröffentlicht in: | Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 2013-05, Vol.31 (3) |
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Hauptverfasser: | , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | A novel measurement technique is used to extract two physically distinct “permanent” (long lived on our experimental time scale, ≤12 000 s) and one recoverable charge components of the negative bias temperature instability in p-channel metal–oxide–semiconductor field effect transistors under inversion and n-channel devices under accumulation. The results suggest that the permanent components are present in both cases, while there is little, if any, recoverable charge present in the case of the n-channel device. A physical explanation is provided involving the band energy diagram to explain these observations. |
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ISSN: | 2166-2746 1520-8567 2166-2754 |
DOI: | 10.1116/1.4796115 |