Insight into the multicomponent nature of negative bias temperature instability

A novel measurement technique is used to extract two physically distinct “permanent” (long lived on our experimental time scale, ≤12 000 s) and one recoverable charge components of the negative bias temperature instability in p-channel metal–oxide–semiconductor field effect transistors under inversi...

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Veröffentlicht in:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 2013-05, Vol.31 (3)
Hauptverfasser: Nguyen, Duc D., Kouhestani, Camron, Kambour, Kenneth E., Devine, Roderick A. B.
Format: Artikel
Sprache:eng
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Zusammenfassung:A novel measurement technique is used to extract two physically distinct “permanent” (long lived on our experimental time scale, ≤12 000 s) and one recoverable charge components of the negative bias temperature instability in p-channel metal–oxide–semiconductor field effect transistors under inversion and n-channel devices under accumulation. The results suggest that the permanent components are present in both cases, while there is little, if any, recoverable charge present in the case of the n-channel device. A physical explanation is provided involving the band energy diagram to explain these observations.
ISSN:2166-2746
1520-8567
2166-2754
DOI:10.1116/1.4796115