Surface properties of c-plane GaN grown by plasma-assisted molecular beam epitaxy

Two series of GaN van Hoof structures with different thicknesses of an undoped GaN cap layer were grown under metal-rich conditions by plasma-assisted molecular beam epitaxy. These were then investigated by contactless electroreflectance (CER) to study the Fermi-level position of the (0001) GaN surf...

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Veröffentlicht in:	Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 2013-05, Vol.31 (3)
Hauptverfasser:	Cywiński, Grzegorz, Kudrawiec, Robert, Janicki, Łukasz, Misiewicz, Jan, Chèze, Caroline, Siekacz, Marcin, Sawicka, Marta, Wolny, Paweł, Boćkowski, Michał, Skierbiszewski, Czesław
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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