Indium nitride epilayer prepared by UHV-plasma-assisted metalorganic molecule beam epitaxy

Indium nitride films grown at various growth temperatures were prepared on GaN buffer layers using self-designed plasma-assisted metal-organic molecular beam epitaxy. The influence of substrate temperature on film crystallinity, surface morphology, optical, and electrical properties was studied usin...

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Veröffentlicht in:	Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena Microelectronics and nanometer structures processing, measurement and phenomena, 2011-09, Vol.29 (5), p.051204-051204-5
Hauptverfasser:	Chen, Wei-Chun, Kuo, Shou-Yi, Lai, Fang-I, Lin, Woei-Tyng, Hsiao, Chien-Nan, Tsai, Din Ping
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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