Etch mechanisms of silicon gate structures patterned in SF6/CH2F2/Ar inductively coupled plasmas

Patterning complex metal gate stack becomes increasingly challenging since the gate dimension for all isolated as well as dense gate structures present on 300 mm wafer needs to be controlled within the nanometer range. In this article, the authors show that SF6/CH2F2/Ar plasma chemistries to etch th...

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Veröffentlicht in:	Journal of vacuum science & technology 2011-01, Vol.29 (1), p.B 29, (2010), 011028-1 à10
Hauptverfasser:	Luere, O., Pargon, E., Vallier, L., Pelissier, B., Joubert, O.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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