Highly selective etching of silicon nitride to physical-vapor-deposited a-C mask in dual-frequency capacitively coupled CH2F2∕H2 plasmas

A multilevel resist (MLR) structure can be fabricated based on a very thin amorphous carbon (a-C) layer (≅80nm) and Si3N4 hard-mask layer (≅300nm). The authors investigated the selective etching of the Si3N4 layer using a physical-vapor-deposited (PVD) a-C mask in a dual-frequency superimposed capac...

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Veröffentlicht in:	Journal of vacuum science & technology. A, Vacuum, surfaces, and films Vacuum, surfaces, and films, 2010-01, Vol.28 (1), p.65-68
Hauptverfasser:	Kim, J. S., Kwon, B. S., Heo, W., Jung, C. R., Park, J. S., Shon, J. W., Lee, N.-E.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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