Review of electrical characterization of ultra-shallow junctions with micro four-point probes

Electrical characterization of ultra-shallow junctions, relying on advanced implant and anneal processes, has received much attention in the past few years since conventional characterization methods fail. With continued scaling of semiconductor devices, the problems associated with conventional tec...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena Microelectronics and nanometer structures processing, measurement and phenomena, 2010-01, Vol.28 (1), p.C1C27-C1C33
Hauptverfasser: Petersen, Dirch H., Hansen, Ole, Hansen, Torben M., Bøggild, Peter, Lin, Rong, Kjær, Daniel, Nielsen, Peter F., Clarysse, Trudo, Vandervorst, Wilfried, Rosseel, Erik, Bennett, Nick S., Cowern, Nick E. B.
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page C1C33
container_issue 1
container_start_page C1C27
container_title Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena
container_volume 28
creator Petersen, Dirch H.
Hansen, Ole
Hansen, Torben M.
Bøggild, Peter
Lin, Rong
Kjær, Daniel
Nielsen, Peter F.
Clarysse, Trudo
Vandervorst, Wilfried
Rosseel, Erik
Bennett, Nick S.
Cowern, Nick E. B.
description Electrical characterization of ultra-shallow junctions, relying on advanced implant and anneal processes, has received much attention in the past few years since conventional characterization methods fail. With continued scaling of semiconductor devices, the problems associated with conventional techniques will become even more evident. In several recent studies micro four-point probe (M4PP) has been demonstrated as a reliable high precision metrology method for both sheet resistance and Hall effect measurements of ultra-shallow implants and has revealed a promising potential for carrier profiling.
doi_str_mv 10.1116/1.3224898
format Article
fullrecord <record><control><sourceid>scitation_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1116_1_3224898</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>scitation_primary_10_1116_1_3224898</sourcerecordid><originalsourceid>FETCH-LOGICAL-c299t-3509ebd1ffcd3ecdcc9d2348cf69655c7cefc2375e07254ca9791347954b57633</originalsourceid><addsrcrecordid>eNp9kEtLAzEUhYMoWKsL_0G2Cql5TCaTpRRfUBBElzKkdxKaMm2GJNOiv96OLboQXJ0L5-Nwz0HoktEJY6y8YRPBeVHp6giNmOSUVLJUx7ubKkYY5eIUnaW0pJSWUogRen-xG2-3ODhsWws5ejAthoWJBrKN_tNkH9aD3bc5GpIWpm3DFi_7NQxOwlufF3jlIQbsQh9JF_w64y6GuU3n6MSZNtmLg47R2_3d6_SRzJ4fnqa3MwJc60yEpNrOG-YcNMJCA6AbLooKXKlLKUGBdcCFkpYqLgswWmkmCqVlMZeqFGKMrva5uy9SitbVXfQrEz9qRuthl5rVh1127PWeTeDzd7sfeBPiL1h3jfsP_pv8BWdkcz0</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Review of electrical characterization of ultra-shallow junctions with micro four-point probes</title><source>Alma/SFX Local Collection</source><source>AIP Journals (American Institute of Physics)</source><creator>Petersen, Dirch H. ; Hansen, Ole ; Hansen, Torben M. ; Bøggild, Peter ; Lin, Rong ; Kjær, Daniel ; Nielsen, Peter F. ; Clarysse, Trudo ; Vandervorst, Wilfried ; Rosseel, Erik ; Bennett, Nick S. ; Cowern, Nick E. B.</creator><creatorcontrib>Petersen, Dirch H. ; Hansen, Ole ; Hansen, Torben M. ; Bøggild, Peter ; Lin, Rong ; Kjær, Daniel ; Nielsen, Peter F. ; Clarysse, Trudo ; Vandervorst, Wilfried ; Rosseel, Erik ; Bennett, Nick S. ; Cowern, Nick E. B.</creatorcontrib><description>Electrical characterization of ultra-shallow junctions, relying on advanced implant and anneal processes, has received much attention in the past few years since conventional characterization methods fail. With continued scaling of semiconductor devices, the problems associated with conventional techniques will become even more evident. In several recent studies micro four-point probe (M4PP) has been demonstrated as a reliable high precision metrology method for both sheet resistance and Hall effect measurements of ultra-shallow implants and has revealed a promising potential for carrier profiling.</description><identifier>ISSN: 1071-1023</identifier><identifier>ISSN: 2166-2746</identifier><identifier>EISSN: 1520-8567</identifier><identifier>EISSN: 2166-2754</identifier><identifier>DOI: 10.1116/1.3224898</identifier><identifier>CODEN: JVTBD9</identifier><language>eng</language><ispartof>Journal of vacuum science &amp; technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2010-01, Vol.28 (1), p.C1C27-C1C33</ispartof><rights>American Vacuum Society</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c299t-3509ebd1ffcd3ecdcc9d2348cf69655c7cefc2375e07254ca9791347954b57633</citedby><cites>FETCH-LOGICAL-c299t-3509ebd1ffcd3ecdcc9d2348cf69655c7cefc2375e07254ca9791347954b57633</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,790,4497,27903,27904</link.rule.ids></links><search><creatorcontrib>Petersen, Dirch H.</creatorcontrib><creatorcontrib>Hansen, Ole</creatorcontrib><creatorcontrib>Hansen, Torben M.</creatorcontrib><creatorcontrib>Bøggild, Peter</creatorcontrib><creatorcontrib>Lin, Rong</creatorcontrib><creatorcontrib>Kjær, Daniel</creatorcontrib><creatorcontrib>Nielsen, Peter F.</creatorcontrib><creatorcontrib>Clarysse, Trudo</creatorcontrib><creatorcontrib>Vandervorst, Wilfried</creatorcontrib><creatorcontrib>Rosseel, Erik</creatorcontrib><creatorcontrib>Bennett, Nick S.</creatorcontrib><creatorcontrib>Cowern, Nick E. B.</creatorcontrib><title>Review of electrical characterization of ultra-shallow junctions with micro four-point probes</title><title>Journal of vacuum science &amp; technology. B, Microelectronics and nanometer structures processing, measurement and phenomena</title><description>Electrical characterization of ultra-shallow junctions, relying on advanced implant and anneal processes, has received much attention in the past few years since conventional characterization methods fail. With continued scaling of semiconductor devices, the problems associated with conventional techniques will become even more evident. In several recent studies micro four-point probe (M4PP) has been demonstrated as a reliable high precision metrology method for both sheet resistance and Hall effect measurements of ultra-shallow implants and has revealed a promising potential for carrier profiling.</description><issn>1071-1023</issn><issn>2166-2746</issn><issn>1520-8567</issn><issn>2166-2754</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNp9kEtLAzEUhYMoWKsL_0G2Cql5TCaTpRRfUBBElzKkdxKaMm2GJNOiv96OLboQXJ0L5-Nwz0HoktEJY6y8YRPBeVHp6giNmOSUVLJUx7ubKkYY5eIUnaW0pJSWUogRen-xG2-3ODhsWws5ejAthoWJBrKN_tNkH9aD3bc5GpIWpm3DFi_7NQxOwlufF3jlIQbsQh9JF_w64y6GuU3n6MSZNtmLg47R2_3d6_SRzJ4fnqa3MwJc60yEpNrOG-YcNMJCA6AbLooKXKlLKUGBdcCFkpYqLgswWmkmCqVlMZeqFGKMrva5uy9SitbVXfQrEz9qRuthl5rVh1127PWeTeDzd7sfeBPiL1h3jfsP_pv8BWdkcz0</recordid><startdate>201001</startdate><enddate>201001</enddate><creator>Petersen, Dirch H.</creator><creator>Hansen, Ole</creator><creator>Hansen, Torben M.</creator><creator>Bøggild, Peter</creator><creator>Lin, Rong</creator><creator>Kjær, Daniel</creator><creator>Nielsen, Peter F.</creator><creator>Clarysse, Trudo</creator><creator>Vandervorst, Wilfried</creator><creator>Rosseel, Erik</creator><creator>Bennett, Nick S.</creator><creator>Cowern, Nick E. B.</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>201001</creationdate><title>Review of electrical characterization of ultra-shallow junctions with micro four-point probes</title><author>Petersen, Dirch H. ; Hansen, Ole ; Hansen, Torben M. ; Bøggild, Peter ; Lin, Rong ; Kjær, Daniel ; Nielsen, Peter F. ; Clarysse, Trudo ; Vandervorst, Wilfried ; Rosseel, Erik ; Bennett, Nick S. ; Cowern, Nick E. B.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c299t-3509ebd1ffcd3ecdcc9d2348cf69655c7cefc2375e07254ca9791347954b57633</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Petersen, Dirch H.</creatorcontrib><creatorcontrib>Hansen, Ole</creatorcontrib><creatorcontrib>Hansen, Torben M.</creatorcontrib><creatorcontrib>Bøggild, Peter</creatorcontrib><creatorcontrib>Lin, Rong</creatorcontrib><creatorcontrib>Kjær, Daniel</creatorcontrib><creatorcontrib>Nielsen, Peter F.</creatorcontrib><creatorcontrib>Clarysse, Trudo</creatorcontrib><creatorcontrib>Vandervorst, Wilfried</creatorcontrib><creatorcontrib>Rosseel, Erik</creatorcontrib><creatorcontrib>Bennett, Nick S.</creatorcontrib><creatorcontrib>Cowern, Nick E. B.</creatorcontrib><collection>CrossRef</collection><jtitle>Journal of vacuum science &amp; technology. B, Microelectronics and nanometer structures processing, measurement and phenomena</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Petersen, Dirch H.</au><au>Hansen, Ole</au><au>Hansen, Torben M.</au><au>Bøggild, Peter</au><au>Lin, Rong</au><au>Kjær, Daniel</au><au>Nielsen, Peter F.</au><au>Clarysse, Trudo</au><au>Vandervorst, Wilfried</au><au>Rosseel, Erik</au><au>Bennett, Nick S.</au><au>Cowern, Nick E. B.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Review of electrical characterization of ultra-shallow junctions with micro four-point probes</atitle><jtitle>Journal of vacuum science &amp; technology. B, Microelectronics and nanometer structures processing, measurement and phenomena</jtitle><date>2010-01</date><risdate>2010</risdate><volume>28</volume><issue>1</issue><spage>C1C27</spage><epage>C1C33</epage><pages>C1C27-C1C33</pages><issn>1071-1023</issn><issn>2166-2746</issn><eissn>1520-8567</eissn><eissn>2166-2754</eissn><coden>JVTBD9</coden><abstract>Electrical characterization of ultra-shallow junctions, relying on advanced implant and anneal processes, has received much attention in the past few years since conventional characterization methods fail. With continued scaling of semiconductor devices, the problems associated with conventional techniques will become even more evident. In several recent studies micro four-point probe (M4PP) has been demonstrated as a reliable high precision metrology method for both sheet resistance and Hall effect measurements of ultra-shallow implants and has revealed a promising potential for carrier profiling.</abstract><doi>10.1116/1.3224898</doi><tpages>7</tpages></addata></record>
fulltext fulltext
identifier ISSN: 1071-1023
ispartof Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2010-01, Vol.28 (1), p.C1C27-C1C33
issn 1071-1023
2166-2746
1520-8567
2166-2754
language eng
recordid cdi_crossref_primary_10_1116_1_3224898
source Alma/SFX Local Collection; AIP Journals (American Institute of Physics)
title Review of electrical characterization of ultra-shallow junctions with micro four-point probes
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-24T16%3A13%3A24IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-scitation_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Review%20of%20electrical%20characterization%20of%20ultra-shallow%20junctions%20with%20micro%20four-point%20probes&rft.jtitle=Journal%20of%20vacuum%20science%20&%20technology.%20B,%20Microelectronics%20and%20nanometer%20structures%20processing,%20measurement%20and%20phenomena&rft.au=Petersen,%20Dirch%20H.&rft.date=2010-01&rft.volume=28&rft.issue=1&rft.spage=C1C27&rft.epage=C1C33&rft.pages=C1C27-C1C33&rft.issn=1071-1023&rft.eissn=1520-8567&rft.coden=JVTBD9&rft_id=info:doi/10.1116/1.3224898&rft_dat=%3Cscitation_cross%3Escitation_primary_10_1116_1_3224898%3C/scitation_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true