Growth and characterization of GaAs1−xSbx barrier layers for advanced concept solar cells

The InAs∕GaAsSb material system is a promising medium for the implementation of a quantum dot solar cell due to a favorable valence band alignment. The quantum dot solar cell requires a highly dense, highly ordered array of quantum dots for overlap of wave functions to form a band in the band gap of...

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Veröffentlicht in:	Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena Microelectronics and nanometer structures processing, measurement and phenomena, 2008-05, Vol.26 (3), p.1149-1152
Hauptverfasser:	Bremner, S. P., Liu, G. M., Faleev, N., Ghosh, K., Honsberg, C. B.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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