Mechanistic study of plasma damage of low k dielectric surfaces

Plasma damage to low k dielectric materials was investigated from a mechanistic point of view. Low k dielectric films were treated by Ar, O 2 , N 2 , N 2 ∕ H 2 , and H 2 plasmas in a standard reactive ion etching chamber and the damage was characterized by angle resolved x-ray photoelectron spectros...

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Veröffentlicht in:	Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena Microelectronics and nanometer structures processing, measurement and phenomena, 2008-01, Vol.26 (1), p.219-226
Hauptverfasser:	Bao, J., Shi, H., Liu, J., Huang, H., Ho, P. S., Goodner, M. D., Moinpour, M., Kloster, G. M.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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