Feature scale model of Si etching in SF6∕O2∕HBr plasma and comparison with experiments

We have developed a semiempirical feature scale model of Si etching in SF6∕O2∕HBr plasma. Surface kinetics are modeled using parameters that describe F-based Si etching in SF6 and SF6∕O2 plasmas and Br-based Si etching in HBr plasma. The kinetic parameters in the model are constrained by matching si...

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Veröffentlicht in:	Journal of vacuum science & technology. A, Vacuum, surfaces, and films Vacuum, surfaces, and films, 2006-03, Vol.24 (2), p.350-361
Hauptverfasser:	Belen, Rodolfo Jun, Gomez, Sergi, Kiehlbauch, Mark, Aydil, Eray S.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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