Three-dimensional thin-film-transistor silicon-oxide-nitride-oxide-silicon memory cell formed on large grain sized polysilicon films using nuclei induced solid phase crystallization

We describe a manufacturing method (US Patent No. 6,713,371) to enhance the grain size of polysilicon films prepared by solid phase crystallization of amorphous silicon films. This technique requires deposition of silicon nuclei between two layers of amorphous silicon films. Grain size is controllab...

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Veröffentlicht in:	Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 2005-09, Vol.23 (5), p.2184-2188
Hauptverfasser:	Gu, S., Dunton, S. V., Walker, A. J., Nallamothu, S., Chen, E. H., Mahajani, M., Herner, S. B., Eckert, V. L., Hu, S., Konevecki, M., Petti, C., Radigan, S., Raghuram, U., Vyvoda, M. A.
Format:	Artikel
Sprache:	eng
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