Influence of oxide hard mask on profiles of sub-100 nm Si and SiGe gates

Oxide hard mask was found to have a profound effect on sub-100 nm Si and SiGe gates profiles. The gates patterned with hard mask only (photoresist is stripped after hard mask patterning) exhibit considerable profile distortion. It has been found that the distortion is caused by the ions deflection d...

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Veröffentlicht in:	Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 2005-09, Vol.23 (5), p.2194-2197
Hauptverfasser:	Shamiryan, Denis, Paraschiv, Vasile, Locorotondo, Sabrina, Beckx, Stephan, Boullart, Werner, Vanhaelemeersch, Serge
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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