Compositional study of silicon oxynitride thin films deposited using electron cyclotron resonance plasma-enhanced chemical vapor deposition technique

We have used backscattering spectrometry and N 15 ( H 1 , α , γ ) C 12 nuclear reaction analysis techniques to study in detail the variation in the composition of silicon oxynitride films with deposition parameters. The films were deposited using 2.45 GHz electron cyclotron resonance plasma-enhanced...

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Veröffentlicht in:	Journal of vacuum science & technology. A, Vacuum, surfaces, and films Vacuum, surfaces, and films, 2005-05, Vol.23 (3), p.545-550
Hauptverfasser:	Baumann, H., Sah, R. E.
Format:	Artikel
Sprache:	eng
Schlagworte:	70 PLASMA PHYSICS AND FUSION TECHNOLOGY ARGON CARBON 12 CHEMICAL VAPOR DEPOSITION CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ELECTRON CYCLOTRON-RESONANCE GAS FLOW GHZ RANGE 01-100 HYDROGEN 1 INFRARED SPECTRA NITROGEN NITROGEN 15 NITROUS OXIDE NUCLEAR REACTION ANALYSIS ORGANIC SILICON COMPOUNDS OXYGEN PLASMA RUTHERFORD BACKSCATTERING SPECTROSCOPY SILANES SILICON OXIDES THIN FILMS
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