Monte Carlo sensitivity analysis of CF2 and CF radical densities in a c-C4F8 plasma

A Monte Carlo sensitivity analysis is used to build a plasma chemistry model for octacyclofluorobutane (c-C4F8) which is commonly used in dielectric etch. Experimental data are used both quantitatively and qualitatively to analyze the gas phase and gas surface reactions for neutral radical chemistry...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Journal of vacuum science & technology. A, Vacuum, surfaces, and films Vacuum, surfaces, and films, 2004-11, Vol.22 (6), p.2290-2298
Hauptverfasser:	Bose, Deepak, Rauf, Shahid, Hash, D. B., Govindan, T. R., Meyyappan, M.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!