Equivalent oxide thickness reduction of interpoly dielectric using ALD-Al2O3 for flash device application

An interpoly dielectric stack consisting of silicon dioxide, aluminum oxide, and silicon dioxide (OAO stack) has been proposed to replace the oxide-nitride-oxide (ONO) stack in flash memory. Atomic layer deposition and annealing conditions of Al2O3 films were studied to achieve low equivalent oxide...

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Veröffentlicht in:	Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena Microelectronics and nanometer structures processing, measurement and phenomena, 2004-09, Vol.22 (5), p.2295-2298
Hauptverfasser:	Lee, Tai-Peng, Jang, Chuck, Haselden, Barbara, Dong, Mark, Park, Seung, Bartholomew, Lawrence, Chatham, Hood, Senzaki, Yoshihide
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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