Morphological evolution of III–V semiconductors and SiO2 during low energy electron enhanced dry etching

Evolution of surface morphologies of GaAs, GaP, InP, GaN, and SiO2 during dry etching is studied. Etching was carried out in Cl2/H2/Ar plasmas with electron enhancement. No structural damage was introduced during etching. Etched surface morphologies were observed with scanning electron microscopy an...

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Veröffentlicht in:	Journal of vacuum science & technology. A, Vacuum, surfaces, and films Vacuum, surfaces, and films, 2004-07, Vol.22 (4), p.1600-1605
Hauptverfasser:	Lee, S. H., Ho, R. M., Goorsky, M. S., Gillis, H. P., Margolese, D. I., Demine, M. A., Anz, S. J.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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