Statistical limitations of printing 50 and 80 nm contact holes by EUV lithography

Nanoscale photolithography requires accurate formation of very small resist images using high energy photons and a high sensitivity resist. Historically it has been presumed that the primary technical challenges for design of a photoresist that will image with high accuracy under these conditions ar...

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Veröffentlicht in:	Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 2003-11, Vol.21 (6), p.3172-3176
Hauptverfasser:	Gallatin, G. M., Houle, F. A., Cobb, J. L.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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