Atomic layer deposition of zirconium silicate films using zirconium tetrachloride and tetra-n-butyl orthosilicate

Atomic layer chemical vapor deposition of zirconium silicate films with a precursor combination of ZrCl 4 and tetra-n-butyl orthosilicate (TBOS) was studied for high dielectric gate insulators. The effect of deposition conditions, such as deposition temperature, pulse time for purge and precursor in...

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Veröffentlicht in:	Journal of vacuum science & technology. A, Vacuum, surfaces, and films Vacuum, surfaces, and films, 2002-11, Vol.20 (6), p.2096-2100
Hauptverfasser:	Kim, Won-Kyu, Kang, Sang-Woo, Rhee, Shi-Woo, Lee, Nae-In, Lee, Jong-Ho, Kang, Ho-Kyu
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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