Integration and electrical characterization of photosensitive polyimide
A base line process of photosensitive polyimide was developed to significantly reduce cycle time in backend polyimide processes as compared to the use of conventional nonphotosensitive polyimide. A 6 μm resolution was obtained by the use of a wet etch process of photosensitive polyimide (PSPI) in aq...
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| Veröffentlicht in: | Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 2001-05, Vol.19 (3), p.774-779 |
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| container_end_page | 779 |
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| container_issue | 3 |
| container_start_page | 774 |
| container_title | Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures |
| container_volume | 19 |
| creator | Alford, T. L. Zou, Y. L. Gadre, Kaustubh S. King, C. Chen, W. Theodore, N. David |
| description | A base line process of photosensitive polyimide was developed to significantly reduce cycle time in backend polyimide processes as compared to the use of conventional nonphotosensitive polyimide. A 6 μm resolution was obtained by the use of a wet etch process of photosensitive polyimide (PSPI) in aqueous tetramethylammonium hydroxide developer. The feasibility of the polyimide as a passivation stress-buffer layer and passivation-etch mask was also demonstrated. Electrical characterization was performed to measure the surface resistance and the intralevel leakage current along the interface between the polyimide and tetraethylorthosilicate. These findings suggested that reduction of the moisture content of the polymer films is critical to ensure electrical isolation during the integration of PSPI into multilevel structures. |
| doi_str_mv | 10.1116/1.1364703 |
| format | Article |
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Electrical characterization was performed to measure the surface resistance and the intralevel leakage current along the interface between the polyimide and tetraethylorthosilicate. 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Electrical characterization was performed to measure the surface resistance and the intralevel leakage current along the interface between the polyimide and tetraethylorthosilicate. These findings suggested that reduction of the moisture content of the polymer films is critical to ensure electrical isolation during the integration of PSPI into multilevel structures.</abstract><doi>10.1116/1.1364703</doi><tpages>6</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0734-211X |
| ispartof | Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2001-05, Vol.19 (3), p.774-779 |
| issn | 0734-211X 1071-1023 1520-8567 |
| language | eng |
| recordid | cdi_crossref_primary_10_1116_1_1364703 |
| source | AIP Journals Complete |
| subjects | Etching Interfaces (materials) Leakage currents Moisture Photosensitivity |
| title | Integration and electrical characterization of photosensitive polyimide |
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